HG Semi Datasheet | Specifications & PDF Download

Data Sheet HGTG20N60B3 October 2004 40A, 600V, UFS Series N-Channel IGBTs The HGTG20N60B3 is a Generation III MOS gated high voltage switching devic

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H GSemiconductors HG RF POWER TRANSISTOR MRF455 ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION The MRF455 is a 12.5 V Class C epitaxial si

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HY51V(S)17403HG/HGL 4M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION The HY51V(S)17403HG/HGL is the new generation dynamic RAM organized 4,194,304 words x

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RM35HG-34S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Super Fast Recovery Single Diode 35 Amperes/1700 Volts

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MOSPEC Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These stat

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HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high volt

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HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high vo

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G H FEATURES • • • • HG RF POWER TRANSISTOR Semiconductors ROHS Compliance,Silicon NPN POWER TRANSISTOR 2SC2312 –T– SEATING PLANE 4 DESCRIPTION D

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Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC NXH003P120M3F2PTHG The NXH

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HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM D E S C R IP T IO N The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally sui

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RM50HG-12S Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Super Fast Recovery Single Diode 50 Amperes/600 Volts

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HGTG18N120BN Data Sheet December 2001 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new

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HGTG5N120BND, HGTP5N120BND Data Sheet May 2003 21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes The HGTG5N120BND and HGTP5N

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HG Semiconductors MRF475HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION: The HG MRF475 is Designed for 13.6 V FM Lar

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H G Semiconductors HG RF POWER TRANSISTOR 2SC1729 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and condit

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HG Semiconductors HG RF POWER TRANSISTOR 2SC2099 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditi

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H G Semiconductors HG RF POWER TRANSISTOR 2N5944 ROHS Compliance,Silicon NPN POWER TRANSISTOR HG Note : Above parameters , ratings , limits and con

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H G Semiconductors HG RF POWER TRANSISTOR MRF477 ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditi

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