Huajing Microelectronics Datasheet | Specifications & PDF Download

ഀ‫ݾ‬Ԩা CD7388CZ 4u41W ୺к࿛ູٟ৑ׂӖԨা 1ǃὖ ᴀ᭭⫼ೈ˖CD7388CZ CD7388 ᰃϔഫ⫼Ѣッ≑䷇ડⱘಯ BTL ߎⱘ AB ㉏ࡳ⥛ᬒ໻⬉DŽ ݊⡍⚍བϟ˖ Ɣ ࡳ⥛ߎ࡯˄᳔໻ 4u41W/4ȍ˗4u25W/4ȍ @ 14.4Vˈ1kHzˈ10%˅ Ɣ ༅

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Silicon N-Channel Power MOSFET CS6N90 A8H ○R General Description： CS6N90 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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2CZ2045 A0 ， 。 、 、。 N 2CZ2045 A0 ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 45 2×10 0.65 V A V TO-263 -10℃～40℃ 1 ＜85％ 265℃

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N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

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2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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Silicon N-Channel Power MOSFET CS13J65 A0-G ○R General Description： CS13J65 A0-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET CS4N60 A7HD ○R General Description： CS4N60 A7HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon FS Trench IGBT ○R BT40T60 ANFU General Description： VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) I

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2CR162 A8S N ， ， 、 。 N 2CR162 A8S ○R ● ● ● ● ● ● ● VRRM IF（AV） VF（IF=8A） trr（IF=0.5A） 200 8×2 0.975 25 V A V ns TO-220AB

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Silicon N-Channel Power MOSFET CS13N50 A8R ○R General Description： CS13N50 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET CS100N03 B4 ○R General Description： CS100N03 B4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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N D92-02 ○R D92-02 N ， ，、 。 ● ● ● ● ● ● （UPS） ● ● ● ● VRRM IF（AV） VF（IF=10A） trr（IF=0.5A） 200 2×10 0.95 25 V A V ns TO-3P（N

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Silicon N-Channel Power MOSFET ○R CS9N90 ANHD General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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Silicon N-Channel Power MOSFET CS4N60 A3R ○R General Description： CS4N60 A3R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Silicon N-Channel Power MOSFET ○R CS150N04 A8 General Description： CS150N04 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d

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Huajing Discrete Devices ○R Silicon NPN Bipolar Transistor for Low-frequency Amplification 3DD5011A9 1 Description： 3DD5011A9, silicon NPN low fr

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2CZ1560 A9 ， 。 、 、。 N 2CZ1560 A9 ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 60 2×7.5 0.75 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Dio

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Silicon N-Channel Power MOSFET CS8N65 A8H ○R General Description： CS8N65 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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