IRF-24 Datasheet | Specifications & PDF Download

PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta

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IRF624B-VB IRF624B-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 25

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PD - 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead

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UMW IRFL024ZTR 55V N-ChanneI MOSFET 1.Description This Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance

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UMW IRF9Z24N -55V P-Channel MOSFET 1.Description The TO-220 package is universally preferred for all commercial-industrial applications at power diss

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt

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PD - 95057 IRFP9240PbF www.DataSheet4U.com • Lead-Free www.irf.com 1 2/26/04 IRFP9240PbF www.DataSheet4U.com 2 www.irf.com IRFP9240PbF www.

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www.vishay.com IRF-24 Vishay Dale Inductors, Epoxy Conformal Coated, Axial Leaded ELECTRICAL SPECIFICATIONS Inductance Range: 0.1 μH to 1000 μH Ind

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HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lea

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• Lead-Free PD - 95066A IRFR024NPbF IRFU024NPbF www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en

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N-CHANNEL POWER MOSFET IRF240 • Low RDS(on) MOSFET Transistor In A Hermetic Metal Package • Designed For Switching, Power Supply, Motor Control and A

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PD -9.1484B IRF9Z24N HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF244 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Volt

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IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=

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