IRF-24 Datasheet | Specifications & PDF Download

PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP240 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Volt

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www.vishay.com IRF9Z24 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg

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PD - 95057 IRFP9240PbF www.DataSheet4U.com • Lead-Free www.irf.com 1 2/26/04 IRFP9240PbF www.DataSheet4U.com 2 www.irf.com IRFP9240PbF www.

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en

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• Lead-Free PD - 95015A IRFR9024NPbF IRFU9024NPbF www.irf.com 1 12/14/04 IRFR/U9024NPbF 2 www.irf.com IRFR/U9024NPbF www.irf.com 3 IRFR/U902

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IRFE024 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET ≈ 2.16 (0.085) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13

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PD - 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead

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IRF240 MECHANICAL DATA Dimensions in mm (inches) 40.01 (1.575) Max. 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. N–CHANNEL POWER MOSFET FOR HI–REL A

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AUTOMOTIVE GRADE Features  Advanced Planar Technology  Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Ful

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iscN-Channel MOSFET Transistor IRFIZ24G ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.1Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 1

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IRFZ24N HEXFET ® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175¥ Operating Temperature Fast Switching Fully Avalanche Rated VDSS=

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• Lead-Free PD - 95066A IRFR024NPbF IRFU024NPbF www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF

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IRFP240 Data Sheet July 1999 File Number 2087.4 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field

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PD - 94392 SMPS MOSFET Applications High frequency DC-DC converters IRFR24N15D IRFU24N15D HEXFET® Power MOSFET l VDSS 150V RDS(on) max 95mΩ ID 2

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www.DataSheet4U.com PD- 91789 PRELIMINARY Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Techno

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IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) - 60 VGS = - 10 V 19 Qgs

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