IRF-24 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ24N FEATURES ·Drain Current –ID=17A@ TC=25℃ ·Drain Source Volta

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PD -9.1484B www.DataSheet4U.com IRF9Z24N VDSS = -55V RDS(on) = 0.175Ω HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C

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VDS Vgs max RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) 30 V ± 20 V 4.1 mΩ 6.3 14 nC i 50 A Applications • Synchro

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PD - 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead

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www.vishay.com IRF9Z24 Vishay Siliconix Power MOSFET TO-220AB S G S D G D P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qg

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF244 DESCRIPTION ·Drain Current ID=14A@ TC=25℃ ·Drain Source Volt

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PD - 9.1506 PRELIMINARY l l l l l l l IRFR/U9024N HEXFET® Power MOSFET D Ultra Low On-Resistance P-Channel Surface Mount (IRFR9024N) Straight Lead

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HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lea

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• Lead-Free PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPb

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• Lead-Free PD - 95066A IRFR024NPbF IRFU024NPbF www.irf.com 1 12/14/04 IRFR/U024NPbF 2 www.irf.com IRFR/U024NPbF www.irf.com 3 IRFR/U024NPbF

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www.vishay.com IRFP240 Vishay Siliconix Power MOSFET D TO-247AC S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (max.) (nC) Q

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IRFP9240 Data Sheet July 1999 File Number 2294.3 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET®TRANSISTORS THRU-HOLE (TO-204AE) Product Summary Part Number BVDSS IRF240 200V RDS(on) ID 0.18 1

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• Lead-Free PD- 95770 IRF9Z24NSPbF IRF9Z24NLPBF www.irf.com 1 04/25/05 IRF9Z24NS/LPbF 2 www.irf.com IRF9Z24NS/LPbF www.irf.com 3 IRF9Z24NS/LPb

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PD - 9.1673A IRFIZ24E HEXFET® Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF224 DESCRIPTION ·Drain Current ID=3.8A@ TC=25℃ ·Drain Source Vol

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel enhancement mode TrenchMOSTM transistor GENERAL DESCRIPTION N-channel en

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