IRF630 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissi

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Char

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

Rating: 1 ★ (3 votes)

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

Rating: 1 ★ (3 votes)

www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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Power MOSFET IRF630S, SiHF630S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V

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Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHA

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF630NSTRRPBF DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 HIRF630 / HIRF630F N-CHA

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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• Lead-Free PD- 95916 IRF630PbF www.irf.com 1 9/27/04 IRF630PbF 2 www.irf.com IRF630PbF www.irf.com 3 IRF630PbF 4 www.irf.com IRF630PbF www.

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® IRF630S N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET TYPE IRF630S s s s s s s V DSS 200 V R DS(on) < 0.40 Ω ID 9 A TYPICAL RDS(

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF630, IRF630S FEATURES • ’Trench’ technology • Low on-state resista

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www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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