IRF731 Datasheet | Specifications & PDF Download

PD - 9.1568B PRELIMINARY l l l l l IRF7317 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO

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PD - 95039 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Descriptio

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PD - 9.1436B PRELIMINARY l l l l l IRF7314 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface M

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PD - 91435C IRF7311 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanc

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  AUTOMOTIVE GRADE AUIRF7316Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual P Channel MOSFET  Surface

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  AUTOMOTIVE GRADE AUIRF7319Q Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Su

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PD - 9.1505B IRF7316 l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET® Po

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PD - 95181 IRF7314PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Fre

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PD - 9.1606A PRELIMINARY l l l l l IRF7319 HEXFET® Power MOSFET D1 D1 D2 D2 Generation V Technology Ultra Low On-Resistance Dual N and P Channel MO

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www.DataSheet4U.com PD - 95267 IRF7319PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Ful

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PD - 96107A IRF7314QPbF Benefits • Advanced Process Technology • ÿDual P-Channel MOSFET • ÿUltra Low On-Resistance • ÿ175°C Operating Temperature • ÿ

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF731 DESCRIPTION ·Drain Current –ID=5.5A@ TC=25℃ ·Drain Source Vo

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PD - 95039 IRF7313PbF l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated Lead-Fre

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PD - 96125 IRF7313QPbF HEXFET® Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N- Channel MOSFET Surface Mount

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PD -93945A IRF7314Q HEXFET® Power MOSFET Typical Applications • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection • Air bag Benefits • Adva

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  Features  Advanced Planar Technology  Dual N Channel MOSFET  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating

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PD - 95296 IRF7317PbF Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Fr

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PD - 97751 AUTOMOTIVE GRADE AUIRF7313Q HEXFET® Power MOSFET 8 7 Features l l l l l l l l Advanced Planar Technology Dual N Channel MOSFET Low On-Re

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PD - 96365B AUIRF7316Q Features l l l l l l l l HEXFET® Power MOSFET D1 D1 D2 D2 Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET

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AUTOMOTIVE MOSFET PD - 96364B HEXFET® Power MOSFET Features l l l l l l l AUIRF7319Q N-Ch P-Ch -30V V(BR)DSS RDS(on) typ. 30V Advanced Planar Tech

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