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IRFW Matched Datasheet

No	Part Number	Description	Manufacture	PDF
45	IRFW450	N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source	Inchange Semiconductor
44	IRFW520A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A D2-PAK 2 Lower Input Capacitance Imp	Fairchild Semiconductor
43	IRFW530A	Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology IRFW/I530A BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A D2-PAK 2 Lower Input Capacitance Imp	Fairchild Semiconductor
42	IRFW540A	Advanced Power MOSFET Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperatu	Fairchild Semiconductor
41	IRFW550A	(IRFI550A / IRFW550A) Advanced Power MOSFET Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating T	Fairchild Semiconductor
40	IRFW610A	Power MOSFET )($785(6 Qýýý$YDODQFKHýý5XJJHGýý7HFKQRORJ Qýýý5XJJHGýýDWHýý2[LGHýý7HFKQRORJý Qýýý/RZHUýý,QSXWýý&DSDFLWDQFH Qýýý,PSURYHGýýDWHýý&KDU	Samsung
39	IRFW610B	N-Channel MOSFET IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr	Fairchild Semiconductor
38	IRFW614A	Power MOSFET $GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ L	Fairchild Semiconductor
37	IRFW614B	N-Channel MOSFET IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr	Fairchild Semiconductor
36	IRFW620A	Power MOSFET Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 1	Fairchild Semiconductor
35	IRFW620B	N-Channel MOSFET IRFW620B / IRFI620B November 2001 IRFW620B / IRFI620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr	Fairchild Semiconductor
34	IRFW624A	Power MOSFET $GYDQFHG 3RZHU 026)(7 IRFW/I624A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ L	Fairchild Semiconductor

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