| No |
Part Number |
Description |
Manufacture |
PDF |
| 45 |
IRFW450 |
N-Channel MOSFET Transistor
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRFW450
FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source |
Inchange Semiconductor
|
|
| 44 |
IRFW520A |
Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
IRFW/I520A
BVDSS = 100 V RDS(on) = 0.2 Ω ID = 9.2 A
D2-PAK
2
Lower Input Capacitance Imp |
Fairchild Semiconductor
|
|
| 43 |
IRFW530A |
Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology
IRFW/I530A
BVDSS = 100 V RDS(on) = 0.11 Ω ID = 14 A
D2-PAK
2
Lower Input Capacitance Imp |
Fairchild Semiconductor
|
|
| 42 |
IRFW540A |
Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175℃ Operating Temperatu |
Fairchild Semiconductor
|
|
| 41 |
IRFW550A |
(IRFI550A / IRFW550A) Advanced Power MOSFET
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating T |
Fairchild Semiconductor
|
|
| 40 |
IRFW610A |
Power MOSFET
)($785(6
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Samsung
|
|
| 39 |
IRFW610B |
N-Channel MOSFET
IRFW610B / IRFI610B
November 2001
IRFW610B / IRFI610B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr |
Fairchild Semiconductor
|
|
| 38 |
IRFW614A |
Power MOSFET
$GYDQFHG 3RZHU 026)(7
IRFW/I614A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ L |
Fairchild Semiconductor
|
|
| 37 |
IRFW614B |
N-Channel MOSFET
IRFW614B / IRFI614B
November 2001
IRFW614B / IRFI614B
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr |
Fairchild Semiconductor
|
|
| 36 |
IRFW620A |
Power MOSFET
Advanced Power MOSFET
IRFW/I620A
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 1 |
Fairchild Semiconductor
|
|
| 35 |
IRFW620B |
N-Channel MOSFET
IRFW620B / IRFI620B
November 2001
IRFW620B / IRFI620B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s propr |
Fairchild Semiconductor
|
|
| 34 |
IRFW624A |
Power MOSFET
$GYDQFHG 3RZHU 026)(7
IRFW/I624A
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ L |
Fairchild Semiconductor
|
|
