IRFW Datasheet | Specifications & PDF Download

IRFW644B / IRFI644B November 2001 IRFW644B / IRFI644B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFW/I520A BVDSS = 100 V RDS(on) = 0.2 Ω

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IRFW620B / IRFI620B November 2001 IRFW620B / IRFI620B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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IRFW630B — N-Channel MOSFET IRFW630B N-Channel MOSFET 200 V, 9 A, 400 mΩ Features Description These N-Channel enhancement mode power field effect

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$GYDQFHG 3RZHU 026)(7 IRFWZ34 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge

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$GYDQFHG 3RZHU 026)(7 IRFW730S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charg

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$GYDQFHG 3RZHU 026)(7 IRFW720S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charg

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www.DataSheet4U.com Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Cha

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IRFW630B / IRFI630B IRFW630B / IRFI630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFW450 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Volt

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Advanced Power MOSFET IRFW/IZ24A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte

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$GYDQFHG 3RZHU 026)(7 IRFW/IZ14A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha

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$GYDQFHG 3RZHU 026)(7 IRFW/I634A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha

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Advanced Power MOSFET IRFW/I620A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Exte

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$GYDQFHG 3RZHU 026)(7 IRFW/I614A FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Cha

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