Infineon IMB Datasheet | Specifications & PDF Download

Public IMBG65R033M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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IMBG120R017M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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AIMBG75R060M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG120R030M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea

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AIMBG75R140M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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IMBG65R007M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET

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IMBG120R040M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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IMBF170R650M1 IMBF170R650M1 CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Features  Revolutionary semiconductor material - Silicon Carbide

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AIMBG75R016M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG75R040M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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IMBG120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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AIMBG75R090M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG120R060M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea

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IMBG120R030M1H IMBG120R030M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features  Very low switching losses  Short circu

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IMBG65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET

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IMBG120R012M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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AIMBG75R020M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG120R010M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea

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IMBG120R045M1H IMBG120R045M1H CoolSiC™ 1200V SiC Trench MOSFET with .XT interconnection technology Features • Very low switching losses • Short circu

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AIMBG75R027M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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