Integrated Silicon Solution Datasheet | Specifications & PDF Download

IS61LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI MARCH 2005 ® FEATURES • High-speed access t

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IC41C44002A/IC41C44002AS(L) IC41LV44002A/IC41LV44002AS(L) www.DataSheet4U.com Document Title 4Mx4 bit Dynamic RAM with EDO Page Mode Revision Histor

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IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully

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hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL

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IS41C16257 IS41LV16257 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES • • • • • • Fast access and cycle time TTL compatible inputs and ou

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OS-CON DATA SHEET OS-CON 6SVP470M Frequency (kHz) Impedance (ohm) ESR (ohm) 0.12 2.824 0.084 0.5 0.691 0.044 1 0.353 0.037 10 0.046 0.017 100 0.010 0.

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IS61LV25616AL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 10, 12 ns • CMOS low power opera

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IS65C256AL IS62C256AL 32K x 8 LOW POWER CMOS STATIC RAM www.DataSheet4U.com ISSI ® MARCH 2006 FEATURES • Access time: 25 ns, 45 ns • Low active po

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IS42S16100 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM FEBRUARY 2008 FEATURES • Clock frequency: 200, 166, 143 MHz • Fully

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hgihwol D wol D IS66WV51216DALL IS66/67WV51216DBLL 8Mb LOW VOLTAGE, ULTRA LOW POWER PSEUDO CMOS STATIC RAM JUL

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IS61C6416AL IS62C6416AL IS64C6416AL IS65C6416AL www.DataSheet4U.com ISSI JANUARY 2005 ® 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES IS61C6416AL

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IC41C44002A/IC41C44002AS(L) IC41LV44002A/IC41LV44002AS(L) www.DataSheet4U.com Document Title 4Mx4 bit Dynamic RAM with EDO Page Mode Revision Histor

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IS61S6432 64K x 32 SYNCHRONOUS PIPELINE STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock

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IS61SP6464 64K x 64 SYNCHRONOUS PIPELINE STATIC RAM FEATURES • Fast access time: – 117, 100 MHz • Internal self-timed write cycle • Individual Byte Wr

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IS62C1024L 128K x 8 LOW POWER CMOS STATIC RAM ISSI DECEMBER 2003 ® FEATURES • High-speed access time: 35, 70 ns • Low active power: 450 mW (typical

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IS62LV256 32K x 8 LOW VOLTAGE STATIC RAM ISSI DESCRIPTION ® DECEMBER 2002 FEATURES • Access time: 45, 70 ns • Low active power: 70 mW • Low standby

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IS28F020 IS28F020 262,144 x 8 CMOS FLASH MEMORY ISISSSII®® FEBRUARY 1997 FEATURES • High performance - 50 ns maximum access time • CMOS low power co

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www.DataSheet4U.com IS42S16400 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 133, 100 MHz • Fully

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