J304 Datasheet | Specifications & PDF Download

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applic

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N-Channel JFETs J304/305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) −2 to −6 −0.5 to −3 V(BR)GSS Min (V) −30 −30 gfs Mi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE J304 MAXIMUM RATINGS Rating

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2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minim

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J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourc

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passiva

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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passiv

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InterFET Product Folder Technical Support Order Now J304-5 J304, J305 N-Channel JFET Features • InterFET N0026S Geometry • Low Noise: 4 nV/√Hz T

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2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit

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