N-Channel JFETs J304/305 Vishay Siliconix PRODUC.
Toshiba Semiconductor
2SJ304 - P-Channel MOSFET
2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit.
Toshiba Semiconductor
SSM3J304T - Silicon P-Channel MOSFET
SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applic.
Vishay
J304 - N-Channel JFETs
N-Channel JFETs J304/305 Vishay Siliconix PRODUCT SUMMARY Part Number J304 J305 VGS(off) (V) −2 to −6 −0.5 to −3 V(BR)GSS Min (V) −30 −30 gfs Mi.
NXP
BUJ304A - Silicon Diffused Power Transistor
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passiva.
Motorola
J304 - JFET High Frequency Amplifier
MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET High Frequency Amplifier N–Channel — Depletion 1 DRAIN 3 GATE 2 SOURCE J304 MAXIMUM RATINGS Rating .
Fairchild Semiconductor
J304 - N-Channel RF Amplifier
J304 J304 N-Channel RF Amplifier • This device is designed for electronic switching applications such as low ON resistance analog switching. • Sourc.
InterFET
J304 - N-Channel JFET
InterFET Product Folder Technical Support Order Now J304-5 J304, J305 N-Channel JFET Features • InterFET N0026S Geometry • Low Noise: 4 nV/√Hz T.
InterFET Corporation
SMPJ304 - (SMPxxxx) N-Channel Silicon Junction Field-Effect Transistors
E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M.
Toshiba
J304 - 2SJ304
2SJ304 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV) 2SJ304 DC−DC Converter, Relay Drive and Motor Drive Applications Unit.
NXP
BUJ304AX - Silicon Diffused Power Transistor
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passiv.
INCHANGE
MJ3041 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minim.
