| No |
Part Number |
Description |
Manufacture |
PDF |
| 7 |
J304 |
N-Channel JFETs
N-Channel JFETs
J304/305
Vishay Siliconix
PRODUCT SUMMARY
Part Number
J304 J305
VGS(off) (V)
−2 to −6 −0.5 to −3
V(BR)GSS Min (V)
−30 −30
gfs Min (mS)
4.5 3
IDSS Min (mA)
5 1
FEATU |
Vishay
|
|
| 6 |
J304 |
JFET High Frequency Amplifier
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
JFET High Frequency Amplifier
N–Channel — Depletion
1 DRAIN
3 GATE
2 SOURCE
J304
MAXIMUM RATINGS
Rating
Symbol
Value
Drain – Gate Voltage
Gate†|
Motorola
|
|
| 5 |
J304 |
N-Channel RF Amplifier
J304
J304
N-Channel RF Amplifier
• This device is designed for electronic switching applications such as low ON resistance analog switching.
• Sourced from process 50.
1 TO-92 1. Drain 2. Sourc |
Fairchild Semiconductor
|
|
| 4 |
J304 |
N-Channel Silicon Junction Field-Effect Transistor
B-60
J304, J305 N-Channel Silicon Junction Field-Effect Transistor
01/99
¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers
Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Dra |
InterFET
|
|
| 3 |
J304 |
N-CHANNEL SILICON JUNCTION FET
|
New Jersey Semiconductor
|
|
| 2 |
J304 |
2SJ304
2SJ304
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSIV)
2SJ304
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source |
Toshiba
|
|
| 1 |
J304RR |
N-CHANNEL SILICON JUNCTION FET
|
New Jersey Semiconductor
|
|
