KY-017 Tilt switch module KY-017 Tilt switch modul.
Q62702-A1017 - Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: ElectroStatic Discha.KY-017 - Tilt switch module
KY-017 Tilt switch module KY-017 Tilt switch module Contents 1 Picture .STPS80170C - Power Schottky Rectifier
STPS80170C Datasheet 170 V power Schottky rectifier A1 K A2 TO-247 A2 K A1 Product status STPS80170C Product summary IF(AV) 2 x 40 A VRRM 17.STPS60170C - High voltage power Schottky rectifier
STPS60170C High voltage power Schottky rectifier Datasheet - production data Features High junction temperature capability Good trade-off betwe.PS10170CB - High voltage power Schottky rectifier
$ . $ . . $ $ . $ '3$. $ . STPS10170C High voltage power Schottky rectifier Datasheet production data Description This dual center tab .STPS60170CT - Schottky Barrier Rectifier
Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Guaranteed Reverse .NDSH10170A - SiC Schottky Diode
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L NDSH10170A Description Silicon Carbide (SiC) Schottky Diodes use a comple.STPS60170CT - High voltage power Schottky rectifier
STPS60170C High voltage power Schottky rectifier Datasheet - production data Features High junction temperature capability Good trade-off betwe.STPS40170C - 170V power Schottky rectifier
STPS40170C Datasheet 170 V power Schottky rectifier A1 K A2 TO-220AB A1 K A2 TO-247 K A2 K A1 Features • High junction temperature capability • L.STPS30170C - High Voltage Power Schottky Rectifier
STPS30170C High voltage power Schottky rectifier Datasheet - production data A1 K A2 TO-247 A2 K A1 K K A2 A1 D2PAK A2 A1 Features High ju.SKY65017-70LF - InGaP Cascadable Amplifier
DATA SHEET www.datasheet4u.com SKY65017-70LF: InGaP Cascadable Amplifier LF–6 GHz Functional Block Diagram Features ● ● ● ● ● ● ● ● Broadband: LF–.42BYG017 - Stepper Motor
Fax Orders to 650-960-3875 HB Stepper Motors Step Angle 1.8°±5% Insulation Resistant 500V DC 100MO Min Insulation Strength 50Hz 1Minute 500V Min Amb.V40170C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com V40170C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TM.VB10170C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com VB10170C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TM.VB10170C-M3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.VB10170CHM3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.VB60170G-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
www.vishay.com VB60170G-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A T.STPS1017CB - Schottky Barrier Rectifier
Schottky Barrier Rectifier INCHANGE Semiconductor STPS1017CB FEATURES ·Low leakage current ·Avalanche capability specified ·High junction temperatur.C6D10170H - 10A Silicon Carbide Schottky Diode
C6D10170H 6th Generation 1700 V, 10 A Silicon Carbide Schottky Diode Description With the performance advantages of a Silicon Carbide (SiC) Schottky B.MSC050SDA0170B - Zero Recovery Silicon Carbide Schottky Diode
MSC050SDA0170B Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview This section shows the product overview for the MSC050SDA170B device.