LD-MOSFET Datasheet | Specifications & PDF Download

www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi

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FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f

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www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow

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P45N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 20mΩ @VGS = 10V 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =

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P75N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 5mΩ @VGS = 10V 75A TO-252 ABSOLUTE MAXIMUM RATINGS (TC =

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Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extende

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www.DataSheet4U.com IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode s

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www.DataSheet4U.com FQP10N60C/FQPF10N60C FQP10N60C/FQPF10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode p

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FQPF6N80T — N-Channel QFET® MOSFET FQPF6N80T N-Channel QFET® MOSFET 800 V, 3.3 A, 1.95 Ω Description This N-Channel enhancement mode power MOSFET is

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FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Channel QFET® FRFET® MOSFET 500 V, 13 A, 540 mΩ Features • 13 A, 500 V, RDS(on)

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FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5

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P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA

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IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.)  Low gate charge: Q

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P60N03LDG TO-252 (DPAK) Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12

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FDMS0308AS N-Channel PowerTrench® SyncFETTM FDMS0308AS N-Channel PowerTrench® SyncFETTM 30 V, 49 A, 2.8 mΩ October 2014 Features General Descripti

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FDS86106 N-Channel Power Trench® MOSFET July 2011 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 mΩ Features General Description „ Max

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FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m October 2013 Features

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www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mo

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