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LD-MOSFET Datasheet, Features, Application

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Fairchild Semiconductor

11N60 - N-Channel MOSFET

FCP11N60 / FCPF11N60 — N-Channel SuperFET® MOSFET FCP11N60/FCPF11N60 March 2014 General Description SuperFET® MOSFET is Fairchild Semiconductor’s f.
2.0 · rating-2rating-2
Fairchild Semiconductor

2N60B - 600V N-Channel MOSFET

www.DataSheet4U.com SSW2N60B / SSI2N60B November 2001 SSW2N60B / SSI2N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mod.
1.0 · rating-1
UNIKC

P3055LDG - N-Channel MOSFET

P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA.
1.0 · rating-1
Fairchild Semiconductor

5N60C - 600V N-Channel MOSFET

www.DataSheet4U.com FQB5N60C / FQI5N60C FQB5N60C / FQI5N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode pow.
1.0 · rating-1
UNIKC

P45N02LDG - N-Channel MOSFET

P45N02LDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 20mΩ @VGS = 10V 32A TO-252 ABSOLUTE MAXIMUM RATINGS (TA =.
1.0 · rating-1
Fairchild Semiconductor

FDA59N30 - 300V N-Channel MOSFET

FDA59N30 — N-Channel UniFETTM MOSFET FDA59N30 N-Channel UniFETTM MOSFET 300 V, 59 A, 56 mΩ Features • RDS(on) = 47 mΩ (Typ.) @ VGS = 10 V, ID = 29.5 .
1.0 · rating-1
Fairchild Semiconductor

FQP2N60C - 600V N-Channel MOSFET

FQP2N60C / FQPF2N60C — N-Channel QFET® MOSFET FQP2N60C / FQPF2N60C N-Channel QFET® MOSFET 600 V, 2 A, 4.7 Ω December 2013 Description This N-Channe.
1.0 · rating-1
Fairchild Semiconductor

FQPF9N25 - 250V N-Channel MOSFET

   QFET   % % % % % % & '()*+,-.+ /)Ω0,.1+, 2   3 1* * 4 23 .
1.0 · rating-1
Fairchild Semiconductor

13N50C - 500V N-Channel MOSFET

www.DataSheet4U.com FQB13N50C/FQI13N50C QFET FQB13N50C/FQI13N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power fi.
1.0 · rating-1
Fairchild Semiconductor

FDS4435BZ - P-Channel PowerTrench MOSFET

FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features „ Max rDS(on) = 20m: at VGS = -10V, ID = -.
1.0 · rating-1
Fairchild Semiconductor

4N90C - N-Channel MOSFET

FQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET FQP4N90C / FQPF4N90C N-Channel QFET® MOSFET 900 V, 4.0 A, 4.2 Ω December 2013 Description This N-Chan.
1.0 · rating-1
Fairchild Semiconductor

BS170 - N-channel MOSFET

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor G.
1.0 · rating-1
Fairchild Semiconductor

FQPF12N60C - N-Channel MOSFET

FQPF12N60C — N-Channel QFET® MOSFET November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description These N-Channel enhancement mod.
1.0 · rating-1
NIKO-SEM

P60N03LDG - N-Channel MOSFET

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P60N03LDG TO-252 (DPAK) Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 25 12.
1.0 · rating-1
Fairchild Semiconductor

FDMS3669S - MOSFET

FDMS3669S PowerTrench® Power Stage FDMS3669S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel „ Max rDS(on) = 10 mΩ a.
1.0 · rating-1
Fairchild Semiconductor

IRF540N - Power MOSFET

Data Sheet January 2002 IRF540N 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE Symbol DRAIN (FLANGE).
1.0 · rating-1
AUK

SMN630LD - Logic Level N-Ch Power MOSFET

SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.)  Low gate charge: Q.
1.0 · rating-1
Fairchild Semiconductor

10N60C - 600V N-Channel MOSFET

www.DataSheet4U.com FQP10N60C/FQPF10N60C FQP10N60C/FQPF10N60C 600V N-Channel MOSFET QFET TM General Description These N-Channel enhancement mode p.
1.0 · rating-1
Fairchild Semiconductor

11N90C - 900V N-Channel MOSFET

FQA11N90C 900V N-Channel MOSFET www.DataSheet4U.com September 2006 QFET FQA11N90C 900V N-Channel MOSFET Features • • • • • • 11A, 900V, RDS(on) = 1.
1.0 · rating-1
Fairchild

FDMC8884 - N-Channel Power Trench MOSFET

FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features „ Max rDS(on) = 19 mΩ at VGS =.
1.0 · rating-1
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