POWER RELAY 1 POLE—1, 3, 5, 10 A (CADMIUM FREE .
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CS2N60 - N-CHANNEL MOSFET
BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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CS830 - N-Channel MOSFET
IRF830(CS830) : DC/DC 。 N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mo.
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CS830F - N-CHANNEL MOSFET
IRFS830(CS830F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
Kingbright
KPA-2107LZGCK-3.0U - Right Angle Surface LED Lamp
KPA-2107LZGCK-3.0U 2.1 x 0.6 mm Right Angle Surface LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emit.
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3DD313 - SILICON NPN TRANSISTOR
2SD313(3DD313) :。 NPN /SILICON NPN TRANSISTOR Purpose: Low frequency power amplifier applications. /Absolute maximum ratings(Ta=25℃) Symbol Rat.
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CS840F - N-Channel MOSFET
IRFS840(CS840F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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3CD940 - SILICON PNP TRANSISTOR
2SB940(3CD940) PNP /SILICON PNP TRANSISTOR :,。/Purpose: Power amplifier, TV vertical deflection output. :，。/Features: High VCEO, large PC. /Absolu.
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3CD910 - SILICON PNP TRANSISTOR
3CD910 PNP /SILICON PNP TRANSISTOR :。 Purpose: Audio frequency amplifier, low voltage regulator. :, hFE 。 Features: Low saturation voltage, excelle.
Kingbright
KPT-2012LZGCK-3.0U - SMD Chip LED Lamp
KPT-2012LZGCK-3.0U 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode E.
Kingbright
APTD2012LZGCK - SMD Chip LED Lamp
APTD2012LZGCK 2.0 x 1.25 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode Ele.
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BR2N60 - N-CHANNEL MOSFET
BR2N60(CS2N60) N-CHANNEL MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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IRFS634 - N-Channel MOSFET
IRFS634(CS634F) N-Channel MOSFET/N MOS : DC/DC 。 Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch .
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2SA1930 - SILICON PNP TRANSISTOR
2SA1930(3CA1930) PNP /SILICON PNP TRANSISTOR :。 Purpose: General power and driver stage amplifier applications. ：， 2SC5171(3DA5171)。 Features: Hig.
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BLD123D - SILICON NPN TRANSISTOR
BLD123D NPN /SILICON NPN TRANSISTOR : 、、。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regula.
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3CG1015 - SILICON PNP TRANSISTOR
2SA1015(3CG1015) PNP /SILICON PNP TRANSISTOR :,/Purpose: Audio frequency general purpose, driver stage amplifier applications. :,, hFE ,, 2SC1815(3.
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3DD13003F6 - SILICON NPN TRANSISTOR
MJE13003F6(3DD13003F6) NPN /SILICON NPN TRANSISTOR :、、。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, s.
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2SA1036K - SILICON PNP TRANSISTOR
2SA1036K(3CG1036K) PNP /SILICON PNP TRANSISTOR :。 Purpose: Medium power amplifier applications. :，， 2SC2411K（3DG2411K）。 Features: .Large Ic low V.
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2SC536KM - SILICON NPN TRANSISTOR
2SC536M(3DG536M) 2SC536KM(3DG536KM) NPN /SILICON NPN TRANSISTOR :。 Purpose: Small signal general purpose amplifier applications. /Absolute Maximum.
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2SA1376 - SILICON PNP TRANSISTOR
2SA1376(3CG1376) PNP /SILICON PNP TRANSISTOR : 。 Purpose: General purpose amplifier applications requiring high breakdown voltages. : ，, 2SC3478(3D.
Kingbright
APTD1608LZGCK - SMD Chip LED Lamp
APTD1608LZGCK 1.6 x 0.8 mm SMD Chip LED Lamp DESCRIPTIONS The Green source color devices are made with InGaN on Sapphire Light Emitting Diode Electros.
