M231 1 Form A 250V / 10Ω MOSFET Output Solid Sta.
AM2312N - N-Channel 20-V (D-S) MOSFET
Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat.AM2315 - Digital Temperature and Humidity Sensor
Physical map Dimensions (unit: mm) Figure 1: AM2315wiring diagram Aosong(Guangzhou) Electronics Co.,Ltd. TEL:020-36042809 / 36380552 -1- www.aoso.ADM231L - CMOS RS-232 Drivers/Receivers
a 5 V Powered CMOS RS-232 Drivers/Receivers ADM223/ADM230L–ADM241L FEATURES ADM232L TYPICAL OPERATING CIRCUIT Single 5 V Power Supply 5V INPUT .SSM2314GN - N-channel Enhancement-mode Power MOSFET
SSM2314GN N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G S.WTM2310A - N-Channel Enhancement Mode Power MOSFET
WTM2310A N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.0 AMPERES DRAIN SOUCE VOLTAGE 60 VOLTAGE 2 SOURCE .AM2317P - P - Channel Logic Level MOSFET
Analog Power P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) an.AM2317 - -20V P-CHANNEL ENHANCEMENT MODE MOSFET MOSFET
AiT Semiconductor Inc. www.ait-ic.com AM2317 MOSFET -20V P-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM2317 is the P-Channel logic .M231 - Relay
M231 1 Form A 250V / 10Ω MOSFET Output Solid State Relay Description The M231 is a bi-directional, single-pole, single-throw, normally open multipurp.SGM2310 - N-Channel MOSFET
Elektronische Bauelemente SGM2310 3A, 60V,RDS(ON) 90m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description SOT-89 The SGM23.AM2310N - N-Channel MOSFET
Analog Power AM2310N N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures mini.AM2314NE - N-Channel MOSFET
Analog Power N-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat.AM2318N - N-Channel MOSFET
Analog Power N-Channel 30-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applicat.NBM2317S60E1560T0R - Fixed Ratio DC-DC Converter
NBM™ Bus Converter NBM2317S60E1560T0R Non-Isolated, Fixed Ratio DC-DC Converter Features & Benefits • Maximum continuous output power: 800W Up to.M5M231000-xxxP - 1024K-Bit ROM
MITSUBISHI LSls M5M231000-XXXP ,--, '_.• IT (131072.WORD BY 8·BIT) MASK·PROGRAMMABLE ROM DESCRIPTION The Mitsubishi M5M231000-XXXP is 1048576-bit mas.SM2310NSA - N-Channel MOSFET
SM2310NSA Features · 55V/2.1A , RDS(ON)=130mW(max.) @ VGS=4.5V RDS(ON)=180mW(max.) @ VGS=2.5V · Reliable and Rugged · Lead Free and Green Devices Avai.SSM2313GN - P-channel Enhancement-mode Power MOSFET
SSM2313GN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G S.SSM2310GN - N-channel Enhancement-mode Power MOSFET
SSM2310GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 60V 90mΩ 3A Pb-free; RoHS-compliant SOT-23-3 D DESCRIPTION T.SSM2316GN - N-channel Enhancement-mode Power MOSFET
SSM2316GN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 30V 42mΩ 4.7A Pb-free; RoHS-compliant SOT-23-3 D DESCRIPTION.SSM2318GEN - N-channel Enhancement-mode Power MOSFET
SSM2318GEN N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID 30V 720mΩ 1A Pb-free; RoHS-compliant SOT-23-3 D S SOT-23-3 .SSM2312GN - N-channel Enhancement-mode Power MOSFET
SSM2312GN N-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G S.