MJD31 Datasheet | Specifications & PDF Download

SMD Type Transistors Complementary Power Transistors MJD31,MJD31C(NPN) MJD32,MJD32C(PNP) Features Lead Formed for Surface Mount Applications in Pla

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® MJD31B/31C MJD32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS s s s STMicroelectronics PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 (DPAK) POWE

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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Su

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NOT RECOMMENDED FOR NEW DESIGN USE MJD31CUQ Description This Bipolar Junction Transistor (BJT) has been designed to meet the stringent requirements o

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MJD31CUQ 100V NPN HIGH VOLTAGE TRANSISTOR IN TO2M52 (DPAK) Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requi

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Features  BVCEO > 100V  IC = 3A high Continuous Collector Current  ICM = 5A Peak Pulse Current  Ideal for Power Switching or Amplification Applica

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MJD31/31C — NPN Epitaxial Silicon Transistor MJD31/31C NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Ap

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MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed sw

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MJD31C Low voltage NPN power transistor Features ■ Surface-mounting TO-252 power package in tape and reel ■ Complementary to the PNP type MJD32C App

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MJD31/31C — NPN Epitaxial Silicon Transistor MJD31/31C NPN Epitaxial Silicon Transistor Features • General Purpose Amplifier • Low Speed Switching Ap

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MJD31C 100 V, 3 A NPN high power bipolar transistor 16 September 2020 Product data sheet 1. General description NPN high power bipolar transistor

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MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed sw

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MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Su

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MJD31CT4-A Low voltage NPN power transistor Features ■ This device is qualified for automotive application ■ Surface-mounting TO-252 power package i

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MJD31CH-Q 100 V, 3 A NPN high power bipolar transistor 18 May 2021 Product data sheet 1. General description NPN high power bipolar transistor in

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isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 100V(Min) ·C

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY PLASTIC POWER TRANSISTORS MJD31, C NPN MJD32

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD31/D Complementary Power Transistors • • • • MJD31,C* PNP MJD32,C* *Motorola Prefe

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD31/D Complementary Power Transistors • • • • MJD31,C* PNP MJD32,C* *Motorola Prefe

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MJD31 (NPN), MJD32 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed sw

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