MJE13003-V Datasheet | Specifications & PDF Download

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS MJE13003 TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for h

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UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-volt

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isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage

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MJE13003DG5 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-126(R) NPN 。Silicon NPN transistor in a TO-126(R) Plastic Package.  / Features ，。 High

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UNISONIC TECHNOLOGIES CO., LTD MJE13003-XS NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage, high-speed power s

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MJE13003H3 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-251 NPN 。Silicon NPN transistor in a TO-251 Plastic Package.  / Features ,。 High volt

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UNISONIC TECHNOLOGIES CO., LTD MJE13003D-XS NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-

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Page No. : 1/3 MJE13003 NPN EPITAXIAL PLANAR TRANSISTOR Description The MJE13003 is designed for high voltage. High speed switching inductive circui

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Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plas

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SEMICONDUCTOR TECHNICAL DATA MJE13003 TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE AND HIGH SPEED SWITCHING APPLICAT

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MJE13002 / MJE13003 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fa

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Shenzhen SI Semiconductors Co., LTD. Product Specification NPN MJE /MJE SERIES TRANSISTORS MJE13003BR(H) ●： RoHS ●FEATURES：■HIGH VOLTAGE CA

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification MJE13003 DESCRIPTION ·With TO-126 package ·High voltage ,high speed APPL

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UNISONIC TECHNOLOGIES CO., LTD MJE13003D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN SILICON TRANSISTOR  DESCRIPTION The UTC MJE13003D is

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www.DataSheet4U.com MJE13003 FEATURES Power dissipation PCM : 1.25 NPN SILICON TRANSISTOR TO 126 W Tamb=25 1.BASE 2.COLLECTOR 3.EMITTER Collecto

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UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–vol

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UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  DESCRIPTION The UTC

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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