MT Semiconductor Datasheet | Specifications & PDF Download

 MT3203 1 &KDQQHO /RZ4JŠ 026)(7 9 $  PΩ   *HQHUDO'HVFULSWLRQ 7KLV1 &KDQQHO026)(7KDVEHHQGHVLJQHGVSHFLILFD

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SOT323 NPN SILICON PLANAR AVALANCHE TRANSISTOR ISSUE 1 – DECEMBER 1998 FEATURES * Avalanche mode operation * 50A Peak avalanche current * Low inductan

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FDMT800100DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET July 2015 FDMT800100DC N-Channel Dual CoolTM 88 PowerTrench® MOSFET 100 V, 162 A, 2.95 mΩ

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SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 – MARCH 2007 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 A

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 MT4607 Dual N & P-Channel Po werTrench® MOSFET  Features General Description These dual N and P-Channel enhancement mode power field effe

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MTD15N06V Preferred Device Power MOSFET 15 Amps, 60 Volts N−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and c

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MT9V115 MT9V115 1/13‐Inch System‐On‐A‐Chip (SOC) CMOS Digital Image Sensor General Description ON Semiconductor’s MT9V115 is a 1/13-inch CMOS digita

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MTD20N03HDL Preferred Device Power MOSFET 20 Amps, 30 Volts, Logic Level N−Channel DPAK This advanced Power MOSFET is designed to withstand high ener

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DATA SHEET www.onsemi.com MT9V022 1/3‐Inch Wide VGA CMOS Digital Image Sensor MT9V022 Table 1. KEY PERFORMANCE PARAMETERS Parameter Optical Format

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Super323™ SOT323 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES ZUMT617 * * * * * 500mW POWER DISSIPATION IC CONT 1.5A

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Super323™ SOT323 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSUE 1 - SEPTEMBER 1998 FEATURES ZUMT717 * * * * * * 500mW POWER DISSIPATION IC CONT 1.5

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SOT323 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 – FEBRUARY 1999 PARTMARKING DETAILS ZUMT817-25 ZUMT817-40 T7 T23 ZUMT817-25 ZUMT817-40 CO

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www.fairchildsemi.com www.DataSheet4U.com FAN5093 Two Phase Interleaved Synchronous Buck Converter for VRM 9.x Applications Features • Programmable o

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NUS3116MT Main Switch Power MOSFET and Dual Charging BJT −12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package

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MTB9N25E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D2PAK package h

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MOSFET - Power, Single N-Channel 60 V, 0.72 mW, 464 A NVMTS0D7N06C Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize C

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2 W POWER PHEMT • FEATURES ♦ 33.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 7 dB Power Gain at 18 GHz ♦ 30.5 dBm Output Power at 1-dB Compressi

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SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB PARTMA

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SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - OCTOBER 1995 7 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A * 1 Amp conti

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