N-Enhancement Datasheet | Specifications & PDF Download

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

Rating: 4 ★★★★ (173 votes)

RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

Rating: 2 ★★ (52 votes)

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

Rating: 1 ★ (36 votes)

20N60/F20N60/20N60D 20A 600V N-channel Enhancement Mode Power MOSFET 1 Description These silicon N-channel Enhanced VDMOSFETs are obtained by the sel

Rating: 1 ★ (32 votes)

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

Rating: 1 ★ (32 votes)

http://www.ncepower.com Pb Free Product NCE8290 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE8290 uses advanced trench technology

Rating: 1 ★ (26 votes)

Rating: 1 ★ (22 votes)

AP60T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching ▼ RoHS Compliant G

Rating: 1 ★ (21 votes)

SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo

Rating: 1 ★ (19 votes)

AP85T03GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low Gate Charge www.DataSheet4U.com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D

Rating: 1 ★ (18 votes)

HY1906P/B N-Channel Enhancement Mode MOSFET Features • 60V / 120 A , RDS(ON)= 6.0 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugge

Rating: 1 ★ (18 votes)

MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON)

Rating: 1 ★ (17 votes)

  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

Rating: 1 ★ (17 votes)

)+3 1 *'672  VDS ID VGS PD TJ Tstg EAS ' * 6 Ciss Coss Crss VDS= 9,9*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS=25v,VGS 9 I 0+]

Rating: 1 ★ (17 votes)

WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

Rating: 1 ★ (17 votes)

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

Rating: 1 ★ (16 votes)

Free Datasheet http://www.datasheet-pdf.com/ FHP740 FHP740 N MOS 。 AC-DC ， DC-DC， HPMW。 ★ ★ ★ 7A,400V,RDS(on)(）0.51Ω 、 （TC =25℃） — TC=2

Rating: 1 ★ (16 votes)

HM3401 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a

Rating: 1 ★ (15 votes)

http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

Rating: 1 ★ (14 votes)

P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 14mΩ ID -12A P Channel MOSFET UIS, Rg

Rating: 1 ★ (13 votes)