,62,(&-7&6&:*N450 Date : 1998-03-.
BOURNS
15
P-TCO-N450 - Polymeric Thermal Cutoff Device
**HA*LROoGHESN&CFORMEEPLIANT Features n Compact, space-saving 1206 footprint n Low profile and symmetrical design n Small size promotes fast response.
Microsemi
10
1N4500 - SWITCHING DIODE
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET SWIT.
Fenghua Advanced Technology
9
LBN4501 - (LBN4xxx) Surface Acoustic Wave Filter
Éù±íÃ沨Â˲¨Æ÷ SURFACE ACO USTI C W AVE FI LTER Éù±íÃ沨Â˲¨Æ÷ SURFACE ACOUSTICWAVE FILTER ²ÊÉ«µçÊÓ»úÓÃÉù±íÃ沨Â˲¨Æ÷£¨ fp =38.9MHz £© S AW FILTER FOR.
Synoxo
9
SYN450R - 300-450MHz ASK Receiver
Contents 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. General Description ......
IXYS
8
IXTT02N450HV - High Voltage Power MOSFET
High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA 625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS V.
Panasonic Semiconductor
7
XN4506 - NPN epitaxial planer transistor
Composite Transistors XN4506 NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0..
IXYS
7
IXTH1N450HV - High Voltage Power MOSFET
High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A 80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID.
IXYS
6
IXYH30N450HV - IGBT
High Voltage XPTTM IGBT Advance Technical Information IXYT30N450HV IXYH30N450HV VCES = IC110 = VCE(sat) 4500V 30A 3.9V Symbol Test Conditions .
IXYS
6
IXYT30N450HV - IGBT
High Voltage XPTTM IGBT Advance Technical Information IXYT30N450HV IXYH30N450HV VCES = IC110 = VCE(sat) 4500V 30A 3.9V Symbol Test Conditions .
AUK
5
THN450Z - SiGe NPN Transistor
Semiconductor THN450Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ .
STMicroelectronics
5
STP80N450K6 - N-channel Power MOSFET
STP80N450K6 Datasheet N-channel 800 V, 380 mΩ typ., 10 A MDmesh K6 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) Features Ord.
Vishay
5
SSN450 - NTC Inrush Current Limiters
NTC Inrush Current Limiters FEATURES • Temperature measurement. • Temperature control. • Inrush current limiting. • Temperature compensation. • Sensin.
AUK
4
THN4501U - SiGe NPN Transistor
Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4501 Series SOT-523 SiGe NPN Transistor Unit in mm □ FEATURES o Low Noi.
Torex Semiconductor
4
XC61GN4502 - Low Voltage Detector
XC61G Series Low Voltage Detectors (VDF = 0.8V~1.5V) Standard Voltage Detectors (VDF = 1.6V~6.0V) ETR02003-005c ■GENERAL DESCRIPTION The XC61G serie.
Dynex Semiconductor
3
AN4506 - Power Assemblies
Heatsinks HEATSINKS Power Assemblies DS5404-1.0 November 2000 The current range of heatsinks is illustrated with a brief resumé of their characteris.
Panasonic Semiconductor
3
XN4502 - Silicon NPN epitaxial planer transistor
Composite Transistors XN4502 Silicon NPN epitaxial planer transistor Unit: mm For general amplification 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.25 1.5 .
