N450 Datasheet | Specifications & PDF Download

Advance Technical Information High Voltage XPTTM IGBT IXYF40N450 (Electrically Isolated Tab) VCES = IC110 = VCE(sat)  4500V 32A 3.9V Symbol Test

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High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS V

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High Voltage Power MOSFETs Advance Technical Information IXTA02N450HV IXTT02N450HV VDSS I D25 RDS(on) = 4500V = 200mA ≤ 750Ω N-Channel Enhancemen

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Bi-Directional Motor Drive ■ General Description The LN4506 is a bi-directional motor driver IC used in low-voltage application. It provides Forward/R

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**HA*LROoGHESN&CFORMEEPLIANT Features n Compact, space-saving 1206 footprint n Low profile and symmetrical design n Small size promotes fast response

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High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTL2N450 VDSS ID25 RDS(on) = 4500V = 2A  20 ISOPLUS i5-PakTM

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,62,(&-7&6& :*N450 Date : 1998-03-23 ,62,(&-7&6& :* ELWDQG ELWFRGHVDQGWKHLUH[WHQVLRQ 6(&5(7$5,$7 (/27 DOC TYPE :

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LESHAN RADIO COMPANY, LTD. Power MOSFET 20 V, 3.2 A, Single N−Channel,SOT−23 ●APPLICATIONS 1) Load/Power Switch for Portables 2) Load/Power Switch f

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High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS V

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Square Type 5.0 mm × 5.0 mm Series 2.0 Max. NOT SOLDERED 5.2 ± 0.2 5.0 ± 0.2 6.8 ± 0.2 6.2 ± 0.2 5.2 ± 0.2 5.0 ± 0.2 Unit: mm Conventional Part No

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High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V  3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110

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www.DataSheet4U.com www.DataSheet4U.com

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High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N450 VDSS ID25 RDS(on) = 4500V = 0.9A  80 ISOPLUS i4-PakT

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET SWIT

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High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID

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High Voltage XPTTM IGBT Preliminary Technical Information IXYX40N450HV VCES = IC110 = VCE(sat)  4500V 40A 3.9V Symbol Test Conditions Maximum R

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