,62,(&-7&6&:*N450 Date : 1998-03-.
1N4500 - SWITCHING DIODE
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET SWIT.XN4503 - Silicon NPN epitaxial planer transistor
Composite Transistors XN4503 Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output 0.65±0.15 6 0.95 2.8 –0.3 .XN4509 - Silicon NPN epitaxial planer transistor
Composite Transistors XN4509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 0.65±0.15 6 0.95 2.8 –0.3 +0.2 +0.2.1N4508 - Silicon Diode
www.DataSheet4U.com www.DataSheet4U.com .5SMX12N4507 - IGBT-Die
VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smoo.P-TCO-N450 - Polymeric Thermal Cutoff Device
**HA*LROoGHESN&CFORMEEPLIANT Features n Compact, space-saving 1206 footprint n Low profile and symmetrical design n Small size promotes fast response.AN4505 - Power Assemblies
AN4250, AN4250S, AN6593 Single Low Power Consumption Operational Amplifiers s Overview The AN4250, the AN4250S, and the AN6593 are single operational .IXYX40N450HV - High Voltage IGBT
High Voltage XPTTM IGBT Preliminary Technical Information IXYX40N450HV VCES = IC110 = VCE(sat) 4500V 40A 3.9V Symbol Test Conditions Maximum R.IXYL60N450 - High Voltage IGBT
High Voltage XPTTM IGBT (Electrically Isolated Tab) IXYL60N450 VCES = 4500V IC110 = 38A V 3.30V CE(sat) Symbol VCES VCGR VGES VGEM IC25 IC110 .LBN4501 - (LBN4xxx) Surface Acoustic Wave Filter
Éù±íÃ沨Â˲¨Æ÷ SURFACE ACO USTI C W AVE FI LTER Éù±íÃ沨Â˲¨Æ÷ SURFACE ACOUSTICWAVE FILTER ²ÊÉ«µçÊÓ»úÓÃÉù±íÃ沨Â˲¨Æ÷£¨ fp =38.9MHz £© S AW FILTER FOR.LBN4502 - (LBN4xxx) Surface Acoustic Wave Filter
Éù±íÃ沨Â˲¨Æ÷ SURFACE ACO USTI C W AVE FI LTER Éù±íÃ沨Â˲¨Æ÷ SURFACE ACOUSTICWAVE FILTER ²ÊÉ«µçÊÓ»úÓÃÉù±íÃ沨Â˲¨Æ÷£¨ fp =38.9MHz £© S AW FILTER FOR.SPN4506 - N-Channel MOSFET
SPN4506 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4506 is the N-Channel logic enhancement mode power field effect transistors are produced.IXTT1N450HV - High Voltage Power MOSFET
High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A 80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID.SYN450R - 300-450MHz ASK Receiver
Contents 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. General Description .SYN450R - single-chip wireless ASK/OOK
JMRTH SYN450R/SYN460R http://www.jmrth.com TEL:0755-8884 8583 FAX0755-8835 1759 1 .