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Kyocera
EP10LA03 - Schottky Barrier Diode
6FKRWWN\%DUULHU'LRGH (3/$ 62' ્ٹশ)HDWXUHV த9) 8OWUDORZIRUZDUGYROWDJHGURS ৈఢణ +LJKIUHTXHQF\RSHUDWLRQ 5R+6ഥৌૢ 5R+6FRPSOLDQ.P10L60SP - MOS Schottky Rectifier
PFC Device Corporation P10L60SP 10A 60V MOS Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Waveform VRRM .
CITC
CSP10L45S-A - Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation CSP10L45S-A Super Low Barrier High Voltage Power Rectifier Main Product Characteristics IF(AV) VRRM TJ V(Ty.
Shindengen Electric
KP10L07 - TSS KP Series
SHINDENGEN TSS KP Series SMD KP10L07 OUTLINE DIMENSIONS Case : 2F (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction T.
STMicroelectronics
STP10LN80K5 - N-channel Power MOSFET
STP10LN80K5 N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic d.
HUAYI
HYG400P10LR1U - P-Channel Enhancement Mode MOSFET
HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V 100% A.
Nihon Inter Electronics
EP10LA03 - SBD
S B D T y p e : EP10LA03 FEATURES * JEDEC SOD-123 Package * Very Low profile 1.1mm Max * Extremely Low Forward Voltage Drop * Low Power Loss,High Effi.P10L200SP - MOS Schottky Rectifier
P10L200SP PFC Device Corporation 10A 200V MOS Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Waveform VRRM .P10L300E - MOS Schottky Rectifier
PFC Device Corporation P10L300E P10L300D 10A 300V MOS Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Wave.
Shindengen Electric
KP10LU07 - TSS KP Series
SHINDENGEN TSS KP Series SMD KP10LU07 OUTLINE DIMENSIONS Case : 2F (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction .
Shindengen Electric
KP10L06 - TSS KP Series
SHINDENGEN TSS KP Series SMD KP10L06 OUTLINE DIMENSIONS Case : 2F (Unit : mm) RATINGS ●Absolute Maximum Ratings Item Storage Temperature Junction T.P10L45SP - MOS Schottky Rectifier
PFC Device Corporation P10L45SP 10A 45V MOS Schottky Rectifier Major ratings and characteristics Characteristics IF(AV) Rectangular Waveform VRRM .
HUAYI
HYG400P10LR1D - P-Channel Enhancement Mode MOSFET
HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V 100% A.
HUAYI
HYG400P10LR1V - P-Channel Enhancement Mode MOSFET
HYG400P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VGS = -4.5V 100% A.
HUAYI
HYG800P10LR1D - P-Channel MOSFET
HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V 100% a.
CYStech
MTBB0P10L3 - P-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp. Spec. No. : C732L3 Issued Date : 2013.01.15 Revised Date : 2018.11.27 Page No. : 1/9 P-Channel Enhancement Mode Power MOSF.
STMicroelectronics
LNBP10L - LNB supply and control voltage regulator
LNBP8L, LNBP9L LNBP10L, LNBP11L LNB supply and control voltage regulator Features ■ Simplest integrated solution for LNB remote supply and control ■ .
CRM
CRTD370P10L - Trench P-MOSFET
() CRTD370P10L Trench P-MOSFET -100V, 31mΩ, -34A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Exce.
ChipSourceTek
HYG400P10LR1B - P-Channel Enhancement Mode MOSFET
HYG400P10LR1P/B P-Channel Enhancement Mode MOSFET Feature Pin Description -100V/-40A RDS(ON)= 42mΩ(typ.) @ VGS = -10V RDS(ON)= 48mΩ(typ.) @ VG.
