RF63 Datasheet | Specifications & PDF Download

www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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MOSFET IRF630 N-channel mosfet transistor INCHANGE ‹ Features With TO-220 package Low on-state and thermal resistance Fast switching V DSS=200V; RDS

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.4Ω ·6A and 200V ·single pulse avalanche energy rated ·SOA is Power- Dissi

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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IRF634B/IRFS634B November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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LIGITEK ELECTRONICS CO.,LTD. www.DataSheet4U.com Property of Ligitek Only SUPER BRIGHT ROUND TYPE LED LAMPS Pb Lead-Free Parts LURF63233S-PF DATA

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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www.vishay.com IRF634S, SiHF634S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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Advanced Power Electronics Corp. ▼ Ease of Paralleling ▼ Fast Switching Characteristic ▼ Simple Drive Requirement IRF630 RoHS-compliant Product N-CHA

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ADS5463 ADS5463 ADS54RF63 www.ti.com

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SPECIFICATIONS Model Number Test Voltage (kV Peak) 60 Hz Rated Operating Voltage (kV Peak) DC or 60 Hz 2.5 MHz 16 MHz 32 MHz Continous Current, Carry

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 HIRF630 / HIRF630F N-CHA

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF637 DESCRIPTION ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Vo

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF636 DESCRIPTION ·Drain Current –ID=8.1A@ TC=25℃ ·Drain Source Vo

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INCHANGE Semiconductor isc N-Channel Mosfet Transistor ·FEATURES ·RDS(on) =0.6Ω ·8A and 150V ·single pulse avalanche energy rated ·SOA is Power- Dissi

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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its R

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• Lead-Free PD- 95916 IRF630PbF www.irf.com 1 9/27/04 IRF630PbF 2 www.irf.com IRF630PbF www.irf.com 3 IRF630PbF 4 www.irf.com IRF630PbF www.

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IRF630PBF ® IRF630PBF Pb Free Plating Product Pb 9A,200V Heatsink N-Channel Type Power MOSFET Features ̰ RDS(on) (Max 0.4 ˟ )@VGS=10V ̰ Gate Char

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