RF63 Datasheet | Specifications & PDF Download

IRF630 Datasheet N-channel 200 V, 0.29 Ω typ., 9 A, STripFET™ Power MOSFET in a TO‑220 package TAB TO-220 1 23 Features Order code VDS IRF630

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IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25℃ ·Drain Source V

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www.DataSheet4U.com PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Swit

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www.vishay.com IRF634S, SiHF634S Vishay Siliconix Power MOSFET D D2PAK (TO-263) G GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Q

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MRF630 CASE 79-03, STYLE 5 UHF AMPLIFIER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base

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MOSFET www.DataSheet4U.com INCHANGE IRF630F N-channel mosfet transistor ‹ ¡¤ Features 123 With TO-220F package ¤¡ Low on-stateand thermal resista

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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IRF634 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l

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IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type IRF630 IRF630FP VDSS 200V 200V RDS

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IRF634B/IRFS634B November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20

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www.DataSheet4U.com N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF630M IRF630FPM s s s s IRF630M IRF630MFP VDSS 200 V 20

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200401 Issued Date : 2004.04.01 Revised Date : 2005.04.22 Page No. : 1/6 HIRF630 / HIRF630F N-CHA

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PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanc

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MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz. PACK

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Si

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PD - 95342 Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Parallel

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LIGITEK ELECTRONICS CO.,LTD. www.DataSheet4U.com Property of Ligitek Only SUPER BRIGHT ROUND TYPE LED LAMPS Pb Lead-Free Parts LURF63233S-PF DATA

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www.vishay.com IRF630 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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