RF83 Datasheet | Specifications & PDF Download

MBRF830 thru MBRF8100 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes FEATURES ●Metal of silicon rectifi

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MURF805 THRU MURF860 Reverse Voltage - 50 to 600 Volts SUPER FAST RECOVERY SILICON RECTIFIER Forward Current - 8.0 Ampere FEATURES Glass Passivated

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MBRF830-MBRF8100 Schottky Barrier Rectifiers VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A Features High s urge capacity. For us e in low voltage, high fr

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www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Q

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PD - 97145 IRF8313PbF Applications l Load Switch l DC/DC Conversion Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Volta

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www.DataSheet4U.com MRF839F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRF839F is Designed for Class AB, Common Emitter Applicatons Up to 960

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200407 Issued Date : 2004.10.01 Revised Date : 2005.04.22 Page No. : 1/4 HIRF830 / HIRF830F N-CHA

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<

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IRF8308MPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant Containing No Lead and Bromide  Typical values (unless otherwise specified) l Low Profile (<

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IRF830 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,。 Low gate charge, l

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SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enh

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www.DataSheet4U.com MRF837 NPN SILICON RF LOW POWER TRANSISTOR DESCRIPTION: The ASI MRF837 is Designed primerily for wideband large signal predrive

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StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF8372/D The RF Line NPN Silicon RF Low Power Transistor Designed

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www.vishay.com IRF830 Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF830A FEATURES ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast

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www.vishay.com IRF830A Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg max. (nC) Qgs

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StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra-low Package Inductance l Optimized fo

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