.
International Rectifier
IRF8301MTRPBF - Power MOSFET
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.
nELL
IRF830 - N-Channel Power MOSFET
SEMICONDUCTOR IRF830 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4.5A, 500Volts) DESCRIPTION The Nell IRF830 are N-Channel enh.
NXP
IRF830 - PowerMOS transistor
Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Hig.
Galaxy Semi-Conductor Holdings Limited
MBRF830 - SCHOTTKY BARRIER RECTIFIER
BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For.
Galaxy Semi-Conductor Holdings Limited
MBRF835 - SCHOTTKY BARRIER RECTIFIER
BL FEATURES GALAXY ELECTRICAL MBRF830 - - - MBRF8100 VOLTAGE RANGE: 30 - 100 V CURRENT: 8.0 A SCHOTTKY BARRIER RECTIFIER High s urge capacity. For.
HOPERF
RF83 - 300 - 440MHz ASK/OOK Receiver
RF83//RF83C/RF83L/RF83CL ASK/OOK Receiver V2.0 RF83/RF83C/RF83L/RF83CL 300~440MHz ASK/OOK Receiver General Description The RF83/RF83C is a single ch.
Advanced Power Electronics
IRF830P-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power Electronics Corp. IRF830P-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low On-resistance Fast Switching Perf.
International Rectifier
IRF8327SPBF - Power MOSFET
IRF8327SPbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized .
International Rectifier
IRF8301MPbF - Power MOSFET
StrongIRFET IRF8301MTRPbF l Ultra-low RDS(on) l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra-low Package Inductance l Optimized fo.
Vishay
IRF830 - Power MOSFET
Power MOSFET IRF830, SiHF830 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 38.
ON Semiconductor
IRF830 - Power Field Effect Transistor
IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power .
HY
MBRF830 - SCHOTTKY BARRIER RECTIFIERS
MBRF830 thru MBRF8100 SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 30 to 100Volts FORWARD CURRENT - 8.0 Amperes FEATURES ●Metal of silicon rectifi.
Inchange Semiconductor
IRF830 - N-Channel MOSFET Transistor
MOSFET IRF830 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=500V; RDS(ON)1.5 ;.
Inchange Semiconductor
IRF833 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF833 DESCRIPTION ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source V.
Inchange Semiconductor
IRF832 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF832 DESCRIPTION ·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source V.
Inchange Semiconductor
IRF831FI - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IRF831FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Static Drain-Source .
Inchange Semiconductor
IRF831 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF831 DESCRIPTION ·Drain Current –ID= 4.5A@ TC=25℃ ·Drain Source V.
Inchange Semiconductor
IRF830FI - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor IRF830FI DESCRIPTION ·Drain Current –ID= 3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source .
International Rectifier
IRF830PBF - POWER MOSFET
• Lead-Free PD - 94881 IRF830PbF www.irf.com 1 12/10/03 IRF830PbF 2 www.irf.com IRF830PbF www.irf.com 3 IRF830PbF 4 www.irf.com IRF830PbF ww.
