S-1317 Datasheet | Specifications & PDF Download

S-1317 Series 5.5 V INPUT, 100 mA CMOS VOLTAGE REGULATOR www.sii-ic.com WITH 0.35 μA SUPER LOW CURRENT CONSUMPTION © SII Semiconductor Corporation

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2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500

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ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS MITSUBISHI RF MOSFET MODULE RA30H1317M RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Am

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Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1317 Advance Information 128 x 96 Dot Matrix OLED/PLED Segment/Common Driver with Controller This doc

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2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low

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HA13173AH Multiple Voltage Regulator for Car Audio REJ03F0227-0100 Rev.1.00 Jan 16, 2007 Description The HA13173AH is a multiple voltage regulator

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a FEATURES Full Window Comparator 2.0 pF max Input Capacitance 9 V max Differential Input Voltage 2.5 ns Propagation Delays Low Dispersion Low Input B

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FSEZ1317 — Primary-Side-Regulation PWM with POWER MOSFET Integrated FSEZ1317 Primary-Side-Regulation PWM with POWER MOSFET Integrated Features  Low

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M1317M BLOCK DIAGRAM 2 3 135-175MHz 6.5W 7.2V, 2 Stage A

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V MOBILE RADIO BLOCK DIAGRAM 2

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2SC1317 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package. / Features VCE(sat), 2SA719 。

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Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SC1317 Silicon NPN epitaxial planar type For low-frequency power amplifi

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MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency

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19-4595; Rev 1; 7/09 Multiprotocol, Pin-Selectable Data Interface Chipset General Description The MAX13171E along with the MAX13173E/ MAX13175E, form

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CLASSIFICATION PRODUCT SPECIFICATION SUBJECT CLASS 1 or 2 BLUETOOTH MODULE CUSTOMER’S CODE PAN13XX Core Specification PANASONIC’S CODE See Chapte

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CY7C1317BV18 CY7C1917BV18 CY7C1319BV18 CY7C1321BV18 18-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mbit densit

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MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE RA30H1317M1OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp.

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19-4742; Rev 0; 7/09 +5V Multiprotocol, Pin-Selectable Cable Terminator General Description The MAX13174E contains six pin-selectable, multiprotocol

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INTEGRATED CIRCUITS DIVISION CPC1317 Single-Pole OptoMOS® Relay with Bidirectional Transient Protection Parameter Blocking Voltage Load Current On-R

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