S-1317 Datasheet | Specifications & PDF Download

2SK1317 Silicon N-Channel MOS FET Application www.DataSheet4U.com High speed power switching Features • • • • • High breakdown voltage V DSS = 1500

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CLASSIFICATION PRODUCT SPECIFICATION SUBJECT CLASS 1 or 2 BLUETOOTH MODULE CUSTOMER’S CODE PAN13XX Core Specification PANASONIC’S CODE See Chapte

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Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719

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Power Transistors 2SB1317 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1975 s Features q Satisfactory f

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2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low

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FSEZ1317 — Primary-Side-Regulation PWM with POWER MOSFET Integrated FSEZ1317 Primary-Side-Regulation PWM with POWER MOSFET Integrated Features  Low

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Order this document by MC13175/D MC13175 UHF FM/AM Transmitter The MC13175 and MC13176 are one chip FM/AM transmitter subsystems designed for AM/FM c

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NTE1317 Integrated Circuit Module, 2 Power, 2 Channel, AF Power Amplifier, 50W Min. Features: D Muting Circuit D Reduced Heat Sink due to Case Tempera

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MCP131X/2X Voltage Supervisor Features Package Types • Low Supply Current: 1 µA (Typical),10 µA (Max.) • Precision Monitoring Trip Point Options: -

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FSEZ1317A — Primary-Side-Regulation PWM with POWER MOSFET Integrated January 2011 FSEZ1317A Primary-Side-Regulation PWM with POWER MOSFET Integrated

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2SK1317 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage V DSS = 1500 V High speed switchi

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HA13173AH Multiple Voltage Regulator for Car Audio REJ03F0227-0100 Rev.1.00 Jan 16, 2007 Description The HA13173AH is a multiple voltage regulator

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MASW-004240-13170W HMIC™ SP4T Surface Mount Silicon PIN Diode Switch with Integrated Bias Network V1 Features ♦ Operating Freq. 10 ± 2GHz or 24 ± 2G

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Po

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Po

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type

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19-4595; Rev 1; 7/09 Multiprotocol, Pin-Selectable Data Interface Chipset General Description The MAX13171E along with the MAX13173E/ MAX13175E, form

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GaAs Flip Chip Schottky Barrier Diodes Features • • • • • • Low Series Resistance Low Capacitance High Cutoff Frequency Silicon Nitride Passivation Po

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MADS-001317-1320AG GaAs Solder Bump Flip Chip Schottky Diode Features • Low Series Resistance, 4 Ω • Low Capacitance, 45 fF • High Cutoff Frequency

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19-4595; Rev 1; 7/09 Multiprotocol, Pin-Selectable Data Interface Chipset General Description The MAX13171E along with the MAX13173E/ MAX13175E, form

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