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M24L16161ZA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161ZA Elite Semiconductor Memory Technology Inc. Publicat.AQ506 - (AQ504 / AQ506) Current Regulator Diode
AQ506/504 Current Regulator Diode SC70-3, SOT23-3, TO92-2 Packages Product Specification Revision 1.4 July 31, 2006 General Description The AQ506/504.KT130 - Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology
Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology Features • Temperature dependent Resistor with Positive Temperature Coeffi.TSC83251G2D - 0.5 Um SCMOS3 Technology
Qualpack TSC87251G2D Qualification Package TSC87251G2D / TSC83251G2D 0.5 µm SCMOS3 Technology TSC87251G2D 0.5 µm SCMOS3 1999 October TEMIC SEMICON.AD8256A - 2x16W Stereo Digital Audio Amplifier
ESMT Features z 16/18/20/24-bit input with I S, Left-alignment and Right-alignment data format z PSNR & DR(A-weighting) Loudspeaker: 93dB (PSNR), 98dB.M13S2561616A - 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr. 2006) - Original M13S2561616A Revision 1.0 (07 Jun. 2006) - Delete Preliminary at e.M24L16161DA - 16-Mbit (1M x 16) Pseudo Static RAM
ESMT Revision History : Revision 1.0 (Jul. 4, 2007) - Original www.DataSheet4U.com M24L16161DA Elite Semiconductor Memory Technology Inc. Publicat.M24L28256SA - 2-Mbit (256K x 8) Pseudo Static RAM
ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1.M24L48512SA - 4-Mbit (512K x 8) Pseudo Static RAM
ESMT PSRAM www.DataSheet4U.com M24L48512SA 4-Mbit (512K x 8) Pseudo Static RAM Features • • • • • • Advanced low power architecture High speed: 55 .KTY23-7 - Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology
Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology Features • Temperature dependent Resistor with Positive Temperature Coeffi.1N5349B - Silicon-Power-Z-Diodes (non-planar technology)
1N 5345B … 1N 5388B (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissi.BZV58C120 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C13 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C15 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C160 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C27 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C30 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C33 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C36 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.BZV58C39 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.