.
Elite Semiconductor Memory Technology
13
M13S2561616A - 4M x 16 Bit x 4 Banks Double Data Rate SDRAM
www.DataSheet4U.com ESMT Revision History Revision 0.1 (28 Apr. 2006) - Original M13S2561616A Revision 1.0 (07 Jun. 2006) - Delete Preliminary at e.
Acutechnology Semiconductor
8
AQ533 - Ultra-Low Dropout 500mA Voltage Regulator
AQ533 Ultra-Low Dropout 500mA Voltage Regulator Product Specification Revision 1.7 September 13, 2006 General Description The AQ533 is an ultra-low d.
Semiconductor Technology
5
2N5099 - (2N5xxx) High Voltage Silicon Low and Medium Power Transistors
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com .
Semiconductor Technology
5
2N5252 - (2N5xxx) High Voltage Silicon Low and Medium Power Transistors
( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com .
Siemens Semiconductor Group
4
KTY13-5 - Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology
Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology Features • Temperature dependent Resistor with Positive Temperature Coeffi.
General Semiconductor
4
AS3528 - PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY
NEW PRODUCT NEW PRODUCT NEW PRODUCT AVALANCHE ALTERNATOR RECTIFIER - AS3524 AND AS3528 PASSIVATED ANISOTROPIC RECTIFIER TECHNOLOGY Mean Breakdown V.
TEMIC Semiconductors
4
TSC83251G2D - 0.5 Um SCMOS3 Technology
Qualpack TSC87251G2D Qualification Package TSC87251G2D / TSC83251G2D 0.5 µm SCMOS3 Technology TSC87251G2D 0.5 µm SCMOS3 1999 October TEMIC SEMICON.
Elite Semiconductor Memory Technology
4
M24L216128SA - 2-Mbit (128K x 16) Pseudo Static RAM
ESMT PSRAM Features • Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T.
Elite Semiconductor Memory Technology
4
M24L28256SA - 2-Mbit (256K x 8) Pseudo Static RAM
ESMT PSRAM Features •Advanced low-power architecture •High speed: 55 ns, 70 ns •Wide voltage range: 2.7V to 3.6V •Typical active current: 1 mA @ f = 1.
Acutechnology Semiconductor
4
AQ504 - (AQ504 / AQ506) Current Regulator Diode
AQ506/504 Current Regulator Diode SC70-3, SOT23-3, TO92-2 Packages Product Specification Revision 1.4 July 31, 2006 General Description The AQ506/504.
Siemens Semiconductor Group
3
KTY23-7 - Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology
Silicon Spreading Resistance Temperature Sensor in Surface Mount Technology Features • Temperature dependent Resistor with Positive Temperature Coeffi.
Diotec Semiconductor
3
1N5348B - Silicon-Power-Z-Diodes (non-planar technology)
1N 5345B … 1N 5388B (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power dissi.
Diotec Semiconductor
3
BZV58C10 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.
Diotec Semiconductor
3
BZV58C120 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.
Diotec Semiconductor
3
BZV58C18 - Silicon-Power-Z-Diodes (non-planar technology)
BZV58 C8V2 … BZV58 C200 (5 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden) Maximum power d.
TEMIC Semiconductors
3
TSC87251G2D - 0.5 Um SCMOS3 Technology
Qualpack TSC87251G2D Qualification Package TSC87251G2D / TSC83251G2D 0.5 µm SCMOS3 Technology TSC87251G2D 0.5 µm SCMOS3 1999 October TEMIC SEMICON.
Semiconductor Technology
3
MJH16212 - NPN Silicon High Voltage Power Transistor
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MJH16212 PH: (561)283-4500 FAX: (561)286-8914 Webs.