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HRLO120N10H Jan 2016 HRLO120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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HCA60R070F July 2020 HCA60R070F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excell

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BT136- 600 BT136-600 4 Quadrants Sensitive TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V  R.M.S On–State Current (IT(RMS) = 4A)  Sensit

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HCA60R099F Dec 2021 HCA60R099F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HFD5N40 / HFU5N40 July 2005 HFD5N40 / HFU5N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) typ = 1.27 Ω ID = 3.4 A FEATURES  Originative New Desig

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HCA60R040F Dec 2020 HCA60R040F 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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HCT70R1K6 Super Junction MOSFET Jan 2018 HCT70R1K6 700V N-Channel Super Junction MOSFET Features  Very Low FOM (RDS(on) X Qg)  Extremely low swit

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TIP125/126/127 TIP125/126/127 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -

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HFS3N80 Dec 2005 BVDSS = 800 V HFS3N80 800V N-Channel MOSFET FEATURES ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ ‰ Originative New Design Superior Avalanche Rugged Technology

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HCS60R190ST June 2019 HCS60R190ST 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Exce

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HCW60R150 Dec 2019 HCW60R150 600V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent

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HCD80R670 Dec 2019 HCD80R670 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excellent

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TIP100/101/102 TIP100/101/102 ◎ SEMIHOW REV.A0,Oct 2007 TIP100/101/102 TIP100/101/102 Monolithic Construction With Built In Base-Emitter Shunt Res

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HFW9N50_HFI9N50 June 2005 HFW9N50 / HFI9N50 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 0.58 Ω ID = 9.0 A FEATURES  Originative New Design

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HFS12N65S Aug 2009 HFS12N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 0.67 ȍ ID = 12 A FEATURES ‰ Originative New Design ‰ Superior Avala

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HFW6N90_HFI6N90 March 2013 HFW6N90 / HFI6N90 900V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust

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TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C ◎ SEMIHOW REV.A0,Oct 2007 TIP 31 series (TIP31/31A/31B/31C) TIP31/31A/31B/31C Medium Power Line

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TIP 41 series (TIP41/41A//41B/41C) TIP41/41A/41B/41C ◎ SEMIHOW REV.A0.Oct 2007 TIP 41 series (TIP41/41A//41B/41C) TIP41/41A/41B/41C Medium Power Li

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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HRLP120N10H Dec 2016 HRLP120N10H 100V N-Channel Trench MOSFET Features  High Speed Power Switching, Logic Level  Enhanced Body diode dv/dt capabi

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