Si2301 Datasheet | Specifications & PDF Download

MCC TM Micro Commercial Components
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Si2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5

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SI2301 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 P MOS 。P- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,MOS 。 Trench FET Pow

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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P-Channel 2.5 V (G-S) MOSFET Si2301BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () - 20 0.100 at VGS = - 4.5 V 0.150 at VGS = - 2.5 V I

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SMD Type P-Channel Enhancement MOSFET SI2301 (KI2301) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5

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Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.100 @ VGS = - 4.5 V 0.150 @ VGS = - 2.5 V ID (A)

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Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) 0.130 @ VGS = - 4.5 V 0.190 @ VGS = - 2.5 V ID (A

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20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

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SHENZHEN YANGJING MICROELECTRONICS CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS SI2301 P-Channel 20-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLIC

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Si2301CDS Vishay Siliconix P-Channel 20 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.112 at VGS = - 4.5 V 0.142 at VGS = - 2.5 V

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SMD Type P-Channel MOSFET SI2301DS-HF (KI2301DS-HF) ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 130mΩ (VGS =-4.5V) ● RDS(ON) ＜ 190mΩ (VGS =-2.5V) ● Pb−Fr

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P-Channel 1.25-W, 2.5-V Rated MOSFET Product Summary VDS (V) –12 rDS(on) (W) 0.130 @ VGS = –4.5 V 0.190 @ VGS = –2.5 V ID (A) –2.3 –1.9 Si2301DS

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SMD Type P-Channel Enhancement MOSFET SI2301DS (KI2301DS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =

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UMW R UMW SI2301B UMW SI2301B P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX -20 V 120 mΩ@-4.5V 150 mΩ@-2.5V ID 2.5 A SOT-23 1. GATE 2. SOURCE

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SI2301DS-T1-GE3 www.VBsemi.com SI2301DS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10 V

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SI2301BDS P-Channel Enhancement Mode Field Effect Transistor FEATURES °
Super high dense cell design for low RDS(ON) °
Rugged and reliable °
Simple

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SI2301BDS-T1-GE3 www.VBsemi.com SI2301BDS-T1-GE3 P-Channel 20-V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () 0.035 at VGS = - 10

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SMD Type P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS

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