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MRA4001 - MRA4007 SURFACE MOUNT SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused junction For surface mounted

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isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5

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Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM

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LM321H/358H/324H 1MHZ High Voltage Bipolar Opamp Features  Single-Supply Operation from +3V ~ +36V  Dual-Supply Operation from ±1.5V ~ ±18V  Gain

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CA139, CA139A, CA239, CA339, LM339, LM2901, LM3302 Data Sheet October 1999 File Number 795.6 Quad Voltage Comparators for Industrial, Commercial and

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LM321H/358H/324H 1MHZ High Voltage Bipolar Opamp Features  Single-Supply Operation from +3V ~ +36V  Dual-Supply Operation from ±1.5V ~ ±18V  Gain

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CA139, CA139A, CA239, CA339, LM339, LM2901, LM3302 Data Sheet October 1999 File Number 795.6 Quad Voltage Comparators for Industrial, Commercial and

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LM321H/358H/324H 1MHZ High Voltage Bipolar Opamp Features  Single-Supply Operation from +3V ~ +36V  Dual-Supply Operation from ±1.5V ~ ±18V  Gain

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HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A (Z) Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high eff

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DATA SHEET SILICON POWER MOS FET NE5510279A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 6A05/P600A THRU 6A10/P600M TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER VOLTAGE RANGE - 50 to 100

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PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTI

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN

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NEC'S 3.2 V, 2 W, L&S BAND NE5520279A MEDIUM POWER SILICON LD-MOSFET FEATURES • LOW COST PLASTIC SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • HIGH OUTP

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