Silikron Semiconductor Datasheet | Specifications & PDF Download

SSF3338 www.DataSheet4U.com DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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SSF3420 www.DataSheet4U.com DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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SSF6014 www.DataSheet4U.com Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c

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www.DataSheet4U.com SSF2449 DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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www.DataSheet4U.com SSF6008 Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and

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Main Product Characteristics: VDSS RDS(on) ID -30V 39mΩ (typ.) -4.2A ① SOT-23 Features and Benefits:  Advanced MOSFET process technology  Specia

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Main Product Characteristics: VDSS RDS(on) 60V 3Ω(max.) ID 0.3A SOT-23 Features and Benefits:  Advanced MOSFET process technology  Special des

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SSF2429 www.DataSheet4U.com DESCRIPTION The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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www.DataSheet4U.com SSF3018D Feathers: „ „ „ „ „ Advanced trench process technology Special designed for Convertors and power controls High density c

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                                                                                    SSTS2065/SSTS2065F Main Product Characteristics: IF VRRM Tj(max)

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SSF3428 www.DataSheet4U.com DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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SSMD60200CT/SSMD60200CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 60A 200V 175℃ 0.95V Features and Benefits:  High Junction Temperat

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                                                                                    SSTS2065CT/SSTS2065CTF Main Product Characteristics: IF VRRM Tj(

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Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits:  Advanced Process Technolo

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DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V

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SSBD10L100CT/CTF Main Product Characteristics: IF VRRM Tj(max) Vf(max) 2×5A 100V 150℃ 0.7V TO220 SSBD10L100CT Features and Benefits:  High Junct

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Main Product Characteristics: VDSS RDS(on) 30V 2.6mΩ (typ.) ID 110A Features and Benefits: TO220  Advanced MOSFET process technology  Special

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Main Product Characteristics: VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A ① TO220 Features and Benefits:  Advanced trench MOSFET process technolog

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SSF2306 www.DataSheet4U.com DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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SSF3344 www.DataSheet4U.com DESCRIPTION The SSF3344 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with

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