SSF3022D (Silikron Semiconductor Co)
N-Channel MOSFET
SSF3022D
Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized ava
(4 views)
SSF1090 (Silikron Semiconductor)
N-Channel enhancement mode trench power MOSFET
SSF1090
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low
(4 views)
SSF2305 (Silikron Semiconductor)
MOSFET
SSF2305
DESCRIPTION
The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low
(3 views)
SSF1020 (Silikron Semiconductor Co)
Power switching application
SSF1020
Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized aval
(3 views)
SSF2301B (Silikron Semiconductor Co)
PWM applications
SSF2301B
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DESCRIPTION
The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit
(3 views)
SSF3416 (Silikron Semiconductor)
MOSFET
SSF3416
DESCRIPTION
The SSF3416 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as
(3 views)
SSF6007 (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS
-50V
RDS(on) 2.1Ω(typ.)
ID
-130mA
SOT-23
Features and Benefits:
Advanced MOSFET process technology Speci
(3 views)
SSF5506 (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS
55V
RDS(on) ID
3.8mΩ(typ.) 140A
Features and Benefits:
TO-220
Advanced M
(3 views)
2N7002KB (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS RDS(on)
60V 2Ω(max.)
ID 0.3A
SOT-23
Features and Benefits:
Advanced MOSFET process technology Special des
(2 views)
SSF2315 (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS
-20V
RDS(on) 95mΩ (typ.)
ID -3A
SOT-23
Features and Benefits:
Advanced MOSFET process technology Special
(2 views)
SSF10N90F1 (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS
900V
RDS(on) 0.85Ω(typ.)
ID 10A ①
Features and Benefits:
Advanced MOSFET process technology Low On Resista
(2 views)
SSF7509A (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS
75V
RDS(on) 6.5mohm(typ.) ID 80A
Features and Benefits:
D2PAK
Advanced tr
(2 views)
SSF4032CH3 (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
NMOS
PMOS
VDSS
40V
-40V
RDS(on) 16mohm(typ.) 25mohm(typ.)
ID 6A
-4.5A
SOP-8 B
(2 views)
SSF4031C1 (Silikron Semiconductor)
MOSFET
Main Product Characteristics:
VDSS
-40V
RDS(on) 24mohm(typ.)
ID -30A Features and Benefits:
TO-252
Advanced MOSFET process technology Specia
(2 views)
SSF1016 (Silikron Semiconductor Co)
Power switching application
www.DataSheet4U.com SSF1016
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and
(2 views)
SSF2300A (Silikron Semiconductor Co)
Battery protection
SSF2300A
www.DataSheet4U.com
DESCRIPTION
The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit
(2 views)
SSF2301 (Silikron Semiconductor Co)
PWM applications
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SSF2301
DESCRIPTION
The SSF2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with
(2 views)
SSF2715 (Silikron Semiconductor Co)
Extremely high dv/dt capability
www.DataSheet4U.com
SSF2715
Features
■ ■
Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche test
(2 views)
SSF3014 (Silikron Semiconductor Co)
N-Channel MOSFET
SSF3014 www.DataSheet4U.com
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c
(2 views)
SSF3018D (Silikron Semiconductor Co)
N-Channel MOSFET
www.DataSheet4U.com SSF3018D
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c
(2 views)