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Silikron Semiconductor Co
SSF6008 - MOSFET
www.DataSheet4U.com SSF6008 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and .
Silikron Semiconductor
SSFT3904 - MOSFET
Main Product Characteristics: VDSS RDS(on) 30V 2.6mΩ (typ.) ID 110A Features and Benefits: TO220 Advanced MOSFET process technology Special .
Silikron Semiconductor Co
SSF2429 - Battery protection
SSF2429 www.DataSheet4U.com DESCRIPTION The SSF2429 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with .
Silikron Semiconductor Co
SSF2449 - PWM applications
www.DataSheet4U.com SSF2449 DESCRIPTION The SSF2449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
Silikron Semiconductor Co
SSF6014 - MOSFET
SSF6014 www.DataSheet4U.com Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.
Silikron Semiconductor
SSS1004A7 - N-Channel enhancement mode power field effect transistors
Main Product Characteristics VDSS RDS(on) 100V 3.0mΩ (typ.) ID 180A ① Features and Benefits TO-263-7L Advanced Process Technology Special de.
Silikron Semiconductor
SSF3341L - MOSFET
SSF3341L DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
Silikron Semiconductor
SSFT3906 - MOSFET
Main Product Characteristics: VDSS 30V RDS(on) 3.2mohm(typ.) ID 90A Features and Benefits: TO220 Advanced t.
Silikron Semiconductor
SSFT4004 - MOSFET
Main Product Characteristics: VDSS 40V RDS(on) 2.87mohm(typ.) ID 120A ① TO220 Features and Benefits: Advanced trench MOSFET process technolog.
Silikron Semiconductor Co
SSF2318E - MOSFET
Main Product Characteristics: VDSS 20V RDS(on) 18mΩ(typ.) ID 6.5A Features and Benefits SOT-23 Advanced MOSFET process technology Special .
Silikron Semiconductor Co
SSF2336 - Battery protection
www.DataSheet4U.com SSF2336 DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
Silikron Semiconductor Co
SSF2418E - MOSFET
Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Features and Benefits: SOT23-6 Advanced trench MOSFET process technology .
Silikron Semiconductor Co
SSF3014 - N-Channel MOSFET
SSF3014 www.DataSheet4U.com Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.
Silikron Semiconductor Co
SSF3018 - N-Channel MOSFET
www.DataSheet4U.com SSF3018 Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c.
Silikron Semiconductor Co
SSF3018D - N-Channel MOSFET
www.DataSheet4U.com SSF3018D Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c.
Silikron Semiconductor Co
SSF3401 - PWM applications
www.DataSheet4U.com SSF3401 DESCRIPTION The SSF3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
Silikron Semiconductor Co
SSF3428 - PWM applications
SSF3428 www.DataSheet4U.com DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is .
Silikron Semiconductor Co
SSF6807 - Power switching application
www.DataSheet4U.com SSF6807 Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and .
Silikron Semiconductor
SSS1206H - N-Channel enhancement mode power field effect transistors
Main Product Characteristics VDSS 120V RDS(on) 4.7mΩ (typ.) ID 180A ① Features and Benefits TO-247 Advanced.
Silikron Semiconductor
SSS1510 - N-Channel enhancement mode power field effect transistors
Main Product Characteristics VDSS RDS(on) 150V 9.8mΩ (typ.) ID 100A ① Features and Benefits TO-220 Advanced Process Technology Special desig.