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ACS712 - Fully Integrated / Hall Effect-Based Linear Current Sensor
ACS712 Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 2.4 kVRMS Isolation and a Low-Resistance Current Conductor FEATURES AND BENE.A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 25V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100%.SS49E - Linear Hall Effect Sensor
Features ─ Miniature construction ─ Low-Noise Output ─ 4.5 V to 6 V Operation ─ Magnetically Optimized Package ─ Linear output for circuit design flex.U18 - BIPOLAR LATCH TYPE HALL-EFFECT
UNISONIC TECHNOLOGIES CO., LTD U18 BIPOLAR LATCH TYPE HALL-EFFECT FOR HIGH-TEMPERARURE OPERATION DESCRIPTION U18 is a semiconductor integrated circuit.k246 - Silicon N-Channel Junction Type Field Effect Transistor
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif.XY6112 - Cost-effective off-line switching power supply controller
www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o.K2717 - Silicon N Channel MOS Type Field Effect Transistor
2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d.EMBA5N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 150mΩ ID 10A G UIS, Rg.GPT10N50AD - POWER FIELD EFFECT TRANSISTOR
GPT10N50A, GPT10N50AD POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High.OB3350 - Cost Effective LED Controller
OB3350 Cost Effective LED Controller GENERAL DESCRIPTION OB3350 is a highly integrated and cost effective Light Emitting Diode (LED) driver optimized.EMZB08P03V - P-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R.OCH2987 - 350mA Single Phase Hall-Effect DC Fan Driver
OCS Confidential DO NOT COPY OCH2987 350mA Single Phase Hall-Effect DC Fan Driver General Description The OCH2987 is an integrated Hall sensor w.B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S.AO4712 - N-Channel Enhancement Mode Field Effect Transistor
SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo.SS41F - Low Gauss Bipolar Hall-effect Sensor
SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe.TTK2837 - Silicon N Channel Field Effect Transistor
TTK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TTK2837 Switching Regulator Applications • Low drain-source on-resistance.K4075 - MOS FIELD EFFECT TRANSISTOR
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high curre.MT8103 - P-Channel Enhancement Mode Field Effect Transistor
MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON).OCH1931 - Linear Hall-effect Sensors
W W W .ORIENT-1 2C 3HIP.COM ◼ # General Description The OCH1931 is a small, versatile linear Hall-effect device that is operated by the magnetic f.A3144 - Sensitive Hall Effect Switches
Data Sheet 27621.6B* 3141 THRU 3144 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integra.