fect Datasheet | Specifications & PDF Download

Bipolar, Latching, and Unipolar Hall-effect Digital Position Sensor ICs: SS400 Series, SS500 Series 32320997 Issue B Datasheet FEATURES • Quad Hall

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ACS712 Fully Integrated, Hall-Effect-Based Linear Current Sensor IC with 2.4 kVRMS Isolation and a Low-Resistance Current Conductor FEATURES AND BENE

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9mΩ ID 50A G UIS, Rg 100% Tested S

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www.irantk.ir XY6112 Cost-effective off-line switching power supply controller - Shanghai Vision Institute of Electronic Technology Co., Ltd. Page 1 o

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SS41F Low Gauss Bipolar Hall-effect Sensor DESCRIPTION The SS41F is a sensitive, bipolar Hall-effect sensor. This magnetic sensor offers reverse powe

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Features ─ Miniature construction ─ Low-Noise Output ─ 4.5 V to 6 V Operation ─ Magnetically Optimized Package ─ Linear output for circuit design flex

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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SRFET TM AO4712 N-Channel Enhancement Mode Field Effect Transistor TM General Description SRFET The AO4712 uses advanced trench technology with a mo

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W W W .ORIENT-1 2C 3HIP.COM ◼ # General Description The OCH1931 is a small, versatile linear Hall-effect device that is operated by the magnetic f

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OB3350 Cost Effective LED Controller GENERAL DESCRIPTION OB3350 is a highly integrated and cost effective Light Emitting Diode (LED) driver optimized

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MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON)

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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK246 For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplif

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2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low d

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S-57M1 Series www.sii-ic.com © SII Semiconductor Corporation, 2011-2013 HIGH-SPEED BIPOLAR HALL EFFECT LATCH Rev.1.2_01 The S-57M1 Series, develope

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UNISONIC TECHNOLOGIES CO., LTD U18 BIPOLAR LATCH TYPE HALL-EFFECT FOR HIGH-TEMPERARURE OPERATION DESCRIPTION U18 is a semiconductor integrated circuit

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A1354 High Precision 2-Wire Linear Hall Effect Sensor IC with Pulse Width Modulated Output Features and Benefits ▪ Designed for automotive, battery-p

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Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4075 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4075 is N-channel MOS FET designed for high curre

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