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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 1.7mΩ ID 100A G UIS, Rg 100% Tested

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200603 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H05N60 Series N-Channel

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HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termi

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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DISCRETE SEMICONDUCTORS DATA SHEET J111; J112; J113 N-channel silicon field-effect transistors Product specification File under Discrete Semiconducto

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.05.12 Page No. : 1/6 H06N60 Series N-Channel

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E-2 01/99 www.DataSheet4U.com Small Outline (Surface Mount) Package Devices N-Channel Silicon Junction Field-Effect Transistors Device Type BVGSS M

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DISCRETE SEMICONDUCTORS DATA SHEET J174; J175; J176; J177 P-channel silicon field-effect transistors Product specification File under Discrete Semico

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JCWT8CN2ES6 N-Channel Enhancement Mode Field Effect Transistor Marking and pin assignment Product Summary ● VDS ● ID ● RDS(ON)( at VGS=4.5V) ● RDS(O

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Chan

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES • Gate drive available at logic level (

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