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iT3010 10 GHz Medium-Gain Differential Amplifier Description The iT3010 is a packaged differential amplifier designed for use in 10.7 Gb/s and 12.5 Gb

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SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 - NOVEMBER 1995 FEATURES * 180 Volt VCEO * Gain of 500 at IC=100mA * Very low saturation

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Features  BVCEO > 100V  IC = 1A High Continuous Current  ICM = 2A Peak Pulse Current  Low Saturation Voltage  Complementary PNP Type: FZT593  Le

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SMD Type Transistors NPN Silicon Planar Medium Power High Gain Transistor FZT690B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features Very low equival

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SMD Type Transistors NPN Silcon Planar Medium Power High Gain Transistor FZT692B 0.1max +0.050.90 -0.05 +0.151.65 -0.15 Features High gain + very

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SOT23 NPN SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR ISSUE 1 – NOVEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=140mΩ at 1.25A

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SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 2 - FEBRUARY 1996 ZDT1048 C1 C1 C2 C2 PARTMARKING DETAIL – T1048 B1 E1 B2 E2 SM-8 (8 LEAD SO

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SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 – JANUARY 1996 ZDT1049 C1 C1 C2 C2 PARTMARKING DETAIL – T1049 B1 E1 B2 E2 SM-8 (8 LEAD SOT

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SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - AUGUST 1997 ZDT1147 C1 C1 C2 C2 PARTMARKING DETAIL – ZDT1147 B1 E1 B2 E2 SM-8 (8 LEAD SO

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SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT617 C1 C1 C2 C2 PARTMARKING DETAIL — T617 B1 E1 B2 E2 SM-8 (8 LEAD SOT2

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SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT6718 C1 C1 C2 C2 PARTMARKING DETAIL – T6718 B1 E1 B2 E2 NPN PNP

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SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT690 C1 C1 C2 C2 PARTMARKING DETAIL – T690 B1 E1 B2 E2 SM-8 (8 LEAD SOT2

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -12V * 4 Amp Continuous Current * 20 Amp pulse Current *

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 – MAY 94 FEATURES * 45 Volt VCEO * Gain of 400 at IC=1 Amp * Very low saturation voltage

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PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 4– MAY 1998 FEATURES * 6A Peak pulse current * Excellent hFE characteristics up to 6A (puls

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OPA843 OPA 843 SBOS268A – DECEMBER 2002 – OCTOBER 2003 Wideband, Low Distortion, Medium Gain, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES q HIGH

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www.DataSheet4U.com CORPORATION G L 9 4 11 A Description Features The GL9411A is designed for general purpose switching and amplifier applications. 4

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A Product Line of Diodes Incorporated FZT493A 60V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features  BVCEO > 60V  IC = 1A High Continuous Co

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A Product Line of Diodes Incorporated Green FZT1051A 40V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN SOT223 Features  BVCEO > 40V  IC = 5A High Contin

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