stop Datasheet | Specifications & PDF Download

SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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SGA45T60SMD 45A 600V Field Stop Trench IGBT SGA45T60SMD 45A 600V Field Stop Trench IGBT Features • Field Stop Trench Technology • Typical VCE(sat) =

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 7 March 2025 Product data sheet 1. General des

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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FGA60N65SMD — 650 V, 60 A Field Stop IGBT October 2013 FGA60N65SMD 650 V, 60 A Field Stop IGBT Features • Maximum Junction Temperature : TJ = • High

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Silan Microelectronics SGT70N65FDM1P7_Datasheet 70A, 650V FIELD STOP IGBT DESCRIPTION SGT70N65FD1M1P7 adopts Field Stop IGBT technology, offer the o

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Band Stop Filter 50Ω 88 to 108 MHz The Big Deal • High rejection, 60 dB typ. • FM radio rejection (88 to 108 MHz) • Miniature shielded package BSF-10

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CI15T60 15A600V Field Stop Trench IGBT ■ Features • Positive temperature Co-efficient for easy parallel operation. • Short collector time-5us. • High

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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Silan Microelectronics SGT15T60SD1T/F/S_Datasheet 15A, 600V FIELD STOP IGBT DESCRIPTION C 2 The SGT15T60SD1T/F/S field stop III IGBT features lo

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Silan Microelectronics SGTQ75V65FDB2P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ75V65FDB2P7 field stop IGBT adopts Silan Field Stop 5

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NGW75T65M3DFP 650 V, 75 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General description

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TO-247-3L NGW40T65H3DHP 650 V, 40 A trench field-stop IGBT with half rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General

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