stop Datasheet | Specifications & PDF Download

TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 7 March 2025 Product data sheet 1. General des

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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TGPF30N43P Features: • 430V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3L, MGF65A3L, FGF65A3L Data Sheet Description Package KGF65A3L, MGF6

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Features: • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

Rating: 1 ★ (7 votes)

Features: • 1200V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operati

Rating: 1 ★ (7 votes)

FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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FGY40T120SMD — 1200 V, 40 A Field Stop Trench IGBT FGY40T120SMD 1200 V, 40 A Field Stop Trench IGBT March 2016 Features • FS Trench Technology, Pos

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

Rating: 1 ★ (7 votes)

UNISONIC TECHNOLOGIES CO., LTD UTG40N65-S Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N65-S is a

Rating: 1 ★ (7 votes)

UNISONIC TECHNOLOGIES CO., LTD UTG28N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT 1  DESCRIPTION The UTC

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UNISONIC TECHNOLOGIES CO., LTD UTG10N65-S Preliminary Insulated Gate Bipolar Transistor 650V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UT

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Silan Microelectronics SGT50T65FD1PN/P7/PS/PT_Datasheet 50A, 650V FIELD STOP IGBT C 2 DESCRIPTION 1 SGT50T65FD1PN/P7/PS/PT using Field Stop IV IGBT

Rating: 1 ★ (7 votes)

VCE = 650 V, IC = 30 A Trench Field Stop IGBTs with Fast Recovery Diode KGF65A3H, MGF65A3H, FGF65A3H Data Sheet Description Packages The KGF65A3H,

Rating: 1 ★ (6 votes)