AFC6332ES - N&P-Channel MOSFET

This page provides the datasheet information for the AFC6332ES, a member of the AFC6332ES-Alfa N&P-Channel MOSFET family.

Product Overview

Alfa-MOS

Part number	AFC6332ES
Manufacturer	Alfa-MOS
File Size	972.08 KB
Description	N&P-Channel MOSFET
Datasheet	AFC6332ES Datasheet
Additional preview pages of the AFC6332ES datasheet.

AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V Super high density cell design ESD Protection Diode design.
in SOT-363 package design.

Other Datasheets by Alfa-MOS

Published: Dec 1, 2018 |