AFN6810W mosfet equivalent, n-channel mosfet.
z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V
z Super high density cell design for extremely low RDS (ON)
z TSOP-6 package design
Application
z Powe.
Pin Description ( TSOP-6 )
AFN6810W
100V N-Channel Enhancement Mode MOSFET
Features
z 100V/2.3A,RDS(ON)=310mΩ@VGS=10V .
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