AFN6812W mosfet equivalent, 100v n-channel enhancement mode mosfet.
* ID=3.6A,RDS(ON)=105mΩ@VGS=10V
* ID=2.8A,RDS(ON)=125mΩ@VGS=4.5V
* Super high density cell design for extremely
low RDS (ON)
* TSOP-6 package design
Appl.
Pin Description ( TSOP-6 )
AFN6812W
100V N-Channel Enhancement Mode MOSFET
Features
* ID=3.6A,RDS(ON)=105mΩ@VGS=10.
AFN6812W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.
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