* ID=20A,RDS(ON)=18mΩ@VGS=10V
* ID=15A,RDS(ON)=20mΩ@VGS=6V
* Super high density cell design for extremely low RDS (ON)
* DFN5X6-8L package design Applica.

Pin Description ( DFN5X6-8L ) Features
* ID=20A,RDS(ON)=18mΩ@VGS=10V
* ID=15A,RDS(ON)=20mΩ@VGS=6V
* Super .

AFN6872S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial in.

AFN6870S

AFN6800WS

AFN6802WS

AFN6804S

AFN6810W

AFN6812W

AFN6820

AFN6830

AFN6882S

AFN6003S

AFN6011S

AFN6018S

AFN6027S