Description
The AO6401A uses advanced trench technology to provide excellent RDS(ON), low gate charge and www.DataSheet4U.com operation with gate voltages as low as 2.5V.
Features
- VDS = -30V ID = -5.0A RDS(ON) < 44mΩ RDS(ON) < 55mΩ RDS(ON) < 82mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.5V) (VGS = -2.5V)
D TSOP6 Top View D D G 1 6 2 5 3 4 D D S G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol 10 Sec Steady State Parameter Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current Power Dissipation
A B
Units V V
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG 1.6 1.0 -5 -3.7
±12 -3.7 -3.2 -25 1.0 0.7 -55 to 150.
AO6401A_AlphaOmegaSemiconductors.pdf
