MwT-PH7F - Medium Power AlGaAs/InGaAs pHEMT

CML

The MwT-PH7F by CML is a Medium Power AlGaAs/InGaAs pHEMT. Below is the official datasheet preview.

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MwT-PH7F Medium Power AlGaAs/InGaAs pHEMT by CML - Datasheet Preview — Official preview page of the **MwT-PH7F** Medium Power AlGaAs/InGaAs pHEMT datasheet (CML).

Datasheet Details

Part number	MwT-PH7F
Manufacturer	CML
File Size	618.92 KB
Description	Medium Power AlGaAs/InGaAs pHEMT
Datasheet	MwT-PH7F-CML.pdf
Additional preview pages of the MwT-PH7F datasheet.

MwT-PH7F Product details

Description

Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range.The device is equally effective for either wideband (e.g.6 to 18 GHz) or narrow-band applications.The chip is produced using reliable metal systems and passivated to

Features

24.5 dBm of Power at 18 GHz.
15 dB typical Small Signal Gain at 18 GHz.
45% typical PAE at 18 GHz.
0.25 x 250 Micron Refractory Metal/Gold Gate.
Excellent for High Gain, and High Power Added Efficiency.
Ideal for Commercial, Military, Hi-Rel Space.

📁 MwT-PH7F Similar Datasheet

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Other Datasheets by CML

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Published: Jan 1, 2025 |