MwT-PH7F phemt equivalent, medium power algaas/ingaas phemt.
* 24.5 dBm of Power at 18 GHz
* 15 dB typical Small Signal Gain at 18 GHz
* 45% typical PAE at 18 GHz
* 0.25 x 250 Micron Refractory Metal/Gold Gate
Description:
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pse.
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited fo.
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