Datasheet Details
| Part number | MwT-PH7F |
|---|---|
| Manufacturer | CML |
| File Size | 618.92 KB |
| Description | Medium Power AlGaAs/InGaAs pHEMT |
| Datasheet |
 MwT-PH7F Datasheet
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General Description
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns
The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium powe
Key Features
- 24.5 dBm of Power at 18 GHz.
- 15 dB typical Small Signal Gain at 18 GHz.
- 45% typical PAE at 18 GHz.
- 0.25 x 250 Micron Refractory Metal/Gold Gate.
- Excellent for High Gain, and High Power Added Efficiency.
- Ideal for Commercial, Military, Hi-Rel Space.