MwT-PH7F Overview
Key Specifications
Max Operating Temp: 175 °C
Description
Chip Dimensions: 365 x 260 microns Chip Thickness: 100 microns The MwT-PH7F is a AlGaAs/InGaAs pHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.25 micron gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz frequency range. The device is equally effective for either wideband (e.g.
Key Features
- 24.5 dBm of Power at 18 GHz
- 15 dB typical Small Signal Gain at 18 GHz
- 45% typical PAE at 18 GHz
- 0.25 x 250 Micron Refractory Metal/Gold Gate
- Excellent for High Gain, and High Power Added Efficiency
