H5N50ADND 500V N-Channel Planar MOSFET
• RDSON≤1.5Ω @Vgs=10V, Id=2.5A
k
•Ultra Low gate Charge(typical 16.5nC)
• Low Crss (typical 7.2pF)
e
• Fast switching capability
• 100% avalanche tes.
Drain
e
• Switch Mode Power Supply (SMPS) c
• Uninterruptible Power Supply (UPS)
• Power Factor Correctio.
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