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FDMC8884 - N-Channel Power Trench MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.

Features

  • Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A.
  • Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant General.

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Full PDF Text Transcription

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FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19 mΩ Features „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A „ Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
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