3.5 A, 60 V. RDS(ON) = 0.100 Ω @ VGS = 10 V, RDS(ON) = 0.200 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capabili.

such as disk drive motor control, battery powered circuits where fast switching, low in-line power loss, and resistance .

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to provide superior switching performance and minimiz.

NDS9947

NDS9948

NDS9948-NL

NDS9925A

NDS9933A

NDS9936

NDS9952A

NDS9953A

NDS9955

NDS9956A

NDS9957

NDS9958

NDS9959