NDT455N transistor equivalent, n-channel enhancement mode field effect transistor.
11.5 A, 30 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.02 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capabilit.
such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients.
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide.
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