NDT451 - N-Channel MOSFET

Product Overview

Fairchild

Part number	NDT451
Manufacturer	Fairchild
File Size	Direct Link
Description	N-Channel MOSFET
Datasheet	NDT451 Datasheet
Additional preview pages of the NDT451 datasheet.

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ___________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise note.

📁 Similar Datasheet

NDT014 - N-Channel MOSFET (VBsemi)
NDT01N60 - N-Channel Power MOSFET (ON Semiconductor)
NDT01N60T1G - N-Channel Power MOSFET (ON Semiconductor)
NDT02N40 - N-Channel Power MOSFET (ON Semiconductor)
NDT02N60Z - N-Channel Power MOSFET (ON Semiconductor)
NDT03N40Z - N-Channel Power MOSFET (ON Semiconductor)
NDT28P - 2Gb (x8) DDR3L Synchronous DRAM (Insignis)
NDT2955 - P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)

Other Datasheets by Fairchild

Published: May 12, 2005 |