2N6427 - NPN Darlington Transistor

Fairchild Semiconductor

Datasheet Details

Part number	2N6427
Manufacturer	Fairchild Semiconductor
File Size	93.90 KB
Description	NPN Darlington Transistor
Datasheet	2N6427 Datasheet
Additional preview pages of the 2N6427 datasheet.

📁 Similar Datasheet

2N6427 - NPN Darlington transistor (NXP)
2N6427 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR (Samsung semiconductor)
2N6427 - Darlington Transistors (ON Semiconductor)
2N6427 - NPN Darlington Transistor (National Semiconductor)
2N6427 - Darlington Transistors (Motorola)
2N6420 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
2N6420 - Silicon PNP Power Transistor (Inchange Semiconductor)
2N6421 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
2N6421 - Silicon PNP Power Transistors (Inchange Semiconductor)
2N6422 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)

Other Datasheets by Fairchild Semiconductor

2N6426 - NPN Darlington Transistor
2N6428 - Amplifier Transistor
2N6428A - NPN Epitaxial Silicon Transistor
2N6076 - PNP Small Signal Transistor
2N60B - 600V N-Channel MOSFET
2N6517 - NPN Epitaxial Silicon Transistor
2N6518 - PNP Epitaxial Silicon Transistor
2N6519 - PNP Epitaxial Silicon Transistor

Full PDF Text Transcription

Click to expand full text

2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Published: Mar 22, 2005 |