FDG6332C mosfet equivalent, 20v n&p-channel mosfet.
* Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
* Q2
–0.6 A,
–20V. RDS(ON) = 420 mΩ @ VGS =
&nb.
where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Features
* Q1 0.7 A, 20V. RDS(ON) = 30.
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to.
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&P-Channel
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