FDG6335N 20V N&P-Channel MOSFET

Fairchild Semiconductor

Description

FDG6335N October 2001 FDG6335N 20V N-Channel PowerTrench® MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

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Datasheet Specifications

Part number: FDG6335N
Manufacturer: Fairchild Semiconductor
File Size: 66.23 KB
Datasheet: FDG6335N_FairchildSemiconductor.pdf
Description: 20V N&P-Channel MOSFET

Features

* 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
* Low gate charge (1.1 nC typical)
* High performance trench technology for extremely low RDS(ON)

Applications

* DC/DC converter
* Power management
* Loadswitch S G D D G Pin 1 S 1 or 4 G 2 or 5 6 or 3 D 5 or 2 G 4 or 1 S Dual N-Channel S D 3 or 6 SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Dr

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FDG6335N 20V N &P-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDG6335N-like datasheet