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FDG6335N

20V N&P-Channel MOSFET

FDG6335N Features

* 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V

* Low gate charge (1.1 nC typical)

* High performance trench technology for extremely low RDS(ON)

* Compact industry standard SC70-6 surface mount package Applications

* DC/DC conver

FDG6335N General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small p.

FDG6335N Datasheet (66.23 KB)

Preview of FDG6335N PDF

Datasheet Details

Part number:

FDG6335N

Manufacturer:

Fairchild Semiconductor

File Size:

66.23 KB

Description:

20v n&p-channel mosfet.

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FDG6335N 20V N &P-Channel MOSFET Fairchild Semiconductor

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