FDG6335N Datasheet, Mosfet, Fairchild Semiconductor

FDG6335N Features

• Mosfet
• 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremel

PDF File Details

Part number:

FDG6335N

Manufacturer:

Fairchild Semiconductor

File Size:

66.23kb

Download:

📄 Datasheet

Description:

20v n&p-channel mosfet. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous o

FDG6335N Application

• Applications
• DC/DC converter
• Power management
• Loadswitch S G D D G Pin 1 S 1 or 4 G 2 or 5 6 or 3 D 5 or 2 G 4 or 1

TAGS

📁 Related Datasheet

FDG6335N - N-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – N-Channel, POWERTRENCH) 20 V FDG6335N General Description This N−Channel MOSFET has been designed specifically to.

FDG6331L - Integrated Load Switch (Fairchild Semiconductor)
FDG6331L FDG6331L Integrated Load Switch General Description This device is particularly suited for pact power management in portable electronic e.

FDG6332C - 20V N&P-Channel MOSFET (Fairchild Semiconductor)
FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild S.

FDG6332C - Dual-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – N & P-Channel, POWERTRENCH) 20 V FDG6332C General Description The N & P−Channel MOSFETs are produced using onsemi .

FDG6301N - Dual N-Channel/ Digital FET (Fairchild Semiconductor)
July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.

FDG6301N - Dual N-Channel Digital FET (ON Semiconductor)
Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.

FDG6301N-F085 - Dual N-Channel Digital FET (ON Semiconductor)
Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7.

FDG6302P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro.

FDG6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.

FDG6303N - Dual N-Channel Digital FET (ON Semiconductor)
Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.