FDG6332C 20V N&P-Channel MOSFET

Fairchild Semiconductor

Description

FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General .
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-s.

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Datasheet Specifications

Part number: FDG6332C
Manufacturer: Fairchild Semiconductor
File Size: 93.07 KB
Datasheet: FDG6332C_FairchildSemiconductor.pdf
Description: 20V N&P-Channel MOSFET

Features

* Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
* Q2
* 0.6 A,
* 20V. RDS(ON) = 420 mΩ @ VGS =
* 4.5 V RDS(ON) = 630 mΩ @ VGS =
* 2.5 V
* Low gate charge
* High performance trench technology for extremely low R

FDG6332C Distributors

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FDG6332C 20V N &P-Channel MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDG6332C-like datasheet