FDG6332C Datasheet - Fairchild Semiconductor

FDG6332C 20V N&P-Channel MOSFET

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very sma.

FDG6332C Features

* Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V

* Q2

* 0.6 A,

* 20V. RDS(ON) = 420 mΩ @ VGS =

* 4.5 V RDS(ON) = 630 mΩ @ VGS =

* 2.5 V

* Low gate charge

* High performance trench technology for extremely low R

FDG6332C Datasheet (93.07 KB)

FDG6332C Datasheet Preview — Preview of FDG6332C PDF

Datasheet Details

Part number:

FDG6332C

Manufacturer:

Fairchild Semiconductor

File Size:

93.07 KB

Description:

20v n&p-channel mosfet.

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TAGS

FDG6332C 20V N &P-Channel MOSFET Fairchild Semiconductor

FDG6332C Distributor