FDG6332C - 20V N&P-Channel MOSFET

Fairchild Semiconductor

FDG6332C Datasheet Preview — Preview of FDG6332C PDF

Datasheet Details

Part number	FDG6332C
Manufacturer	Fairchild ↗ Semiconductor
File Size	93.07 KB
Description	20V N&P-Channel MOSFET
Datasheet	FDG6332C_FairchildSemiconductor.pdf

FDG6332C Product details

Description

The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Features

Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V.
Q2.
0.6 A,.
20V. RDS(ON) = 420 mΩ @ VGS =.
4.5 V RDS(ON) = 630 mΩ @ VGS =.
2.5 V.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick).

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Published: Mar 30, 2005 |