FDG6331L Datasheet, Switch, Fairchild Semiconductor

FDG6331L Features

• Switch
• 
    –0.8 A,
    –8 V. RDS(ON) = 260 mΩ @ VGS =
    –4.5 V RDS(ON) = 330 mΩ @ VGS =
    –2.5 V RDS(ON) = 450 mΩ @ VGS =
  &n

PDF File Details

Part number:

FDG6331L

Manufacturer:

Fairchild Semiconductor

File Size:

216.42kb

Download:

📄 Datasheet

Description:

Integrated load switch. This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A outp

FDG6331L Application

• Applications
• Power management
• Load switch November 2014 tm Features
• 
    –0.8 A,
    –8 V.

TAGS

FDG6331L

Fairchild Semiconductor

📁 Related Datasheet

FDG6332C - 20V N&P-Channel MOSFET (Fairchild Semiconductor)
FDG6332C September 2003 FDG6332C 20V N & P-Channel PowerTrench® MOSFETs General Description The N & P-Channel MOSFETs are produced using Fairchild S.

FDG6332C - Dual-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – N & P-Channel, POWERTRENCH) 20 V FDG6332C General Description The N & P−Channel MOSFETs are produced using onsemi .

FDG6335N - 20V N&P-Channel MOSFET (Fairchild Semiconductor)
FDG6335N October 2001 FDG6335N 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve.

FDG6335N - N-Channel MOSFET (ON Semiconductor)
DATA SHEET .onsemi. MOSFET – N-Channel, POWERTRENCH) 20 V FDG6335N General Description This N−Channel MOSFET has been designed specifically to.

FDG6301N - Dual N-Channel/ Digital FET (Fairchild Semiconductor)
July 1999 FDG6301N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.

FDG6301N - Dual N-Channel Digital FET (ON Semiconductor)
Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.

FDG6301N-F085 - Dual N-Channel Digital FET (ON Semiconductor)
Dual N-Channel, Digital FET FDG6301N-F085 Features • 25 V, 0.22 A Continuous, 0.65 A Peak • RDS(ON) = 4 Ω @ VGS = 4.5 V, • RDS(ON) = 5 Ω @ VGS = 2.7.

FDG6302P - Dual P-Channel/ Digital FET (Fairchild Semiconductor)
July 1999 FDG6302P Dual P-Channel, Digital FET General Description These dual P-Channel logic level enhancement mode field effect transistors are pro.

FDG6303N - Dual N-Channel Digital FET (Fairchild Semiconductor)
July 1999 FDG6303N Dual N-Channel, Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are pro.

FDG6303N - Dual N-Channel Digital FET (ON Semiconductor)
Digital FET, Dual N-Channel FDG6303N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced usin.