FDG6335N

N-Channel MOSFET

ON Semiconductor

FDG6335N Features

* 0.7 A, 20 V

* RDS(ON) = 300 mW @ VGS = 4.5 V

* RDS(ON) = 400 mW @ VGS = 2.5 V

* Low Gate Charge (1.1 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* Compact Industry Standard SC70

* 6 Surface Mount Package

FDG6335N General Description

This N

*Channel MOSFET has been designed specifically to improve the overall efficiency of DC

*DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (.

FDG6335N Datasheet (208.68 KB)

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FDG6335N

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ON Semiconductor ↗

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Description:

N-channel mosfet.

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FDG6335N N-Channel MOSFET ON Semiconductor

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FDG6335N General Description

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