FDG6335N Datasheet - ON Semiconductor

FDG6335N N-Channel MOSFET

This N *Channel MOSFET has been designed specifically to improve the overall efficiency of DC *DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (.

FDG6335N Features

* 0.7 A, 20 V

* RDS(ON) = 300 mW @ VGS = 4.5 V

* RDS(ON) = 400 mW @ VGS = 2.5 V

* Low Gate Charge (1.1 nC Typical)

* High Performance Trench Technology for Extremely Low RDS(ON)

* Compact Industry Standard SC70

* 6 Surface Mount Package

FDG6335N Datasheet (208.68 KB)