FDG6335N N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * N-Channel, POWERTRENCH) 20 V FDG6335N General .
This N. Channel MOSFET has been designed specifically to improve the overall efficiency of DC. DC converters using either synchronous or.

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Datasheet Specifications

Part number: FDG6335N
Manufacturer: ON Semiconductor ↗
File Size: 208.68 KB
Datasheet: FDG6335N-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* 0.7 A, 20 V
* RDS(ON) = 300 mW @ VGS = 4.5 V
* RDS(ON) = 400 mW @ VGS = 2.5 V
* Low Gate Charge (1.1 nC Typical)
* High Performance Trench Technology for Extremely Low RDS(ON)
* Compact Industry Standard SC70
* 6 Surface Mount Package

Applications

* DC
* DC Converter
* Power Management
* Loadswitch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Ratings Units VDSS Drain
* Source Voltage 20 V VGSS Gate
* Source Voltage ±12 V ID Drain Current Continuous 0.7 A

FDG6335N Distributors

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FDG6335N N-Channel MOSFET ON Semiconductor

ON Semiconductor FDG6335N-like datasheet