FDN360P datasheet, mosfet equivalent, Fairchild Semiconductor

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FDN360P Features and benefits

* -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10 V RDS(on) = 0.125 Ω @ VGS = -4.5 V.
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* Low gate charge (5nC typical). Fast switching speed. High p.

FDN360P Application

where low in-line power loss and fast switching are required. Features
* -2 A, -30 V. RDS(on) = 0.080 Ω @ VGS = -10.

FDN360P Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suite.

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